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參數資料
| 型號： | FDW256P |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 30V P-Channel PowerTrench MOSFET |
| 中文描述： | 8000 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, MO-153AA |
| 封裝： | TSSOP-8 |
| 文件頁數： | 1/5頁 |
| 文件大小： | 67K |
| 代理商： | FDW256P |
May 2001
FDW256P
30V P-Channel PowerTrench
ò
MOSFET
2001 Fairchild Semiconductor Corporation
FDW256P Rev C(W)
General Description
This PChannel MOSFET is a rugged gate version of
Fairchild Semiconductor’s advanced PowerTrench
process. It has been optimized for power management
applications requiring a wide range of gave drive
voltage ratings (4.5V – 25V).
Applications
Battery protection
DC/DC conversion
Power management
Load switch
Features
–8 A, –30 V
R
DS(ON)
= 13.5 m
@ V
GS
= –10 V
R
DS(ON)
= 20 m
@ V
GS
= –4.5 V
Extended V
GSS
range (
±
25V) for battery applications
High performance trench technology for extremely
low R
DS(ON)
Low profile TSSOP-8 package
D
S
S
G
D
S
S
D
TSSOP-8
Pin 1
4
3
2
1
5
6
7
8
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol
V
DSS
V
GSS
I
D
P
D
Parameter
Ratings
–30
±
25
–8
–50
1.3
0.6
Units
V
V
A
W
°
C
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
Power Dissipation
(Note 1)
– Pulsed
(Note 1a)
(Note 1b)
T
J
, T
STG
Operating and Storage Junction Temperature Range
–55 to +150
Thermal Characteristics
R
θ
JA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
(Note 1b)
96
208
°
C/W
Package Marking and Ordering Information
Device Marking
Device
256P
FDW256P
Reel Size
13’’
Tape width
16mm
Quantity
3000 units
F
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|---|---|
| FDW258P | P-Channel 1.8V Specified PowerTrench MOSFET |
| FDW2601NZ_NL | Dual N-Channel 2.5V Specified PowerTrench MOSFET |
| FDW2601NZ | Dual N-Channel 2.5V Specified PowerTrench MOSFET |
| FDW262P | 20V P-Channel PowerTrench MOSFET |
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相關代理商/技術參數 |
參數描述 |
|---|---|
| FDW256P_08 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:30V P-Channel PowerTrench MOSFET |
| FDW258P | 功能描述:MOSFET 12V/8V PCh MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDW258P_08 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:P-Channel 1.8V Specified PowerTrench MOSFET |
| FDW258P_Q | 功能描述:MOSFET 12V/8V PCh MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDW2601NZ | 功能描述:MOSFET 2.5V DUAL NCH SPEC- IFIED TRENCH RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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