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參數資料
| 型號： | FDW2520C |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | CAP CER 82000PF 100V 10% X7R1210 |
| 中文描述： | 6000 mA, 20 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET, MO-153AA |
| 封裝： | TSSOP-8 |
| 文件頁數： | 3/8頁 |
| 文件大小： | 124K |
| 代理商： | FDW2520C |
FDW2520C Rev C(W)
Electrical Characteristics
(continued)
Symbol
Parameter
T
A
= 25°C unless otherwise noted
Test Conditions
Type Min
Typ Max Units
Drain-Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain-Source Diode Forward Current
Q1
Q2
Q1
Q2
0.83
–0.83
1.2
–1.2
A
V
SD
Drain-Source Diode Forward
Voltage
V
GS
= 0 V, I
S
= 0.83 A
(Note 2)
V
GS
= 0 V, I
S
= –0.83 A
(Note 2)
0.5
–0.7
V
Notes:
1.
R
θ
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R
θ
JC
is guaranteed by design while R
θ
CA
is determined by the user's board design.
a) R
θ
JA
is 125
°
C/W (steady state) when mounted on a 1 inch2 copper pad on FR-4.
b) R
θ
JA
is 208
°
C/W (steady state) when mounted on a minimum copper pad on FR-4.
2.
Pulse Test: Pulse Width < 300
μ
s, Duty Cycle < 2.0%
F
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| FDW2520C_Q | 功能描述:MOSFET PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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