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參數資料
型號: FDW2515NZ
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: JFETs
英文描述: CAP CER 68000PF 100V 10% X7R1210
中文描述: 5.8 A, 20 V, 0.028 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
封裝: TSSOP-8
文件頁數: 3/6頁
文件大?。?/td> 119K
代理商: FDW2515NZ
FDW2515NZ Rev C
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Test Conditions
Symbol
Parameter
Min Typ Max Units
Drain–Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain–Source Diode Forward Current
Drain–Source Diode Forward
Voltage
t
rr
Diode Reverse Recovery Time
Q
rr
Diode Reverse Recovery Charge
1.3
A
V
SD
V
GS
= 0 V,
I
S
= 1.3 A
(Note 2)
0.7
1.2
V
17
5
nS
nC
I
F
= 5.8 A
d
iF
/d
t
= 100 A/μs
(Note 2)
Notes:
1.
R
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R
θ
JC
is guaranteed by design while R
θ
CA
is determined by the user's board design.
a)
77°C/W when
mounted on a 1in
2
pad
of 2 oz copper
b)
114°C/W when mounted
on a minimum pad of 2 oz
copper
Scale 1 : 1 on letter size paper
2.
Pulse Test: Pulse Width < 300
μ
s, Duty Cycle < 2.0%
3.
The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied.
F
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PDF描述
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相關代理商/技術參數
參數描述
FDW2516NZ 功能描述:MOSFET Common Drain N-Channel 2.5V Specified PowerTrench ® MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDW2520 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Complementary PowerTrench MOSFET
FDW2520C 功能描述:MOSFET PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDW2520C 制造商:Fairchild Semiconductor Corporation 功能描述:TSSOP-8 COMPLEMENTARY NCH 20V 300AGA
FDW2520C 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET
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