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參數資料
| 型號： | FDW2520 |
| 廠商： | Fairchild Semiconductor Corporation |
| 英文描述： | 12 AMP MINIATURE POWER RELAY |
| 中文描述： | 互補的PowerTrench MOSFET的 |
| 文件頁數： | 2/8頁 |
| 文件大小： | 124K |
| 代理商： | FDW2520 |
FDW2520C Rev C(W)
Electrical Characteristics
Symbol
T
A
= 25°C unless otherwise noted
Test Conditions
Parameter
Type Min
Typ Max Units
Off Characteristics
BV
DSS
Drain-Source Breakdown
Voltage
Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain
Current
Gate-Body Leakage
V
GS
= 0 V, I
D
= 250 μA
V
GS
= 0 V, I
D
= –250 μA
I
D
= 250 μA, Referenced to 25
°
C
I
D
= –250 μA, Referenced to 25
°
C
V
DS
= 16 V, V
GS
= 0 V
V
DS
= –16 V, V
GS
= 0 V
V
GS
= +12 V, V
DS
= 0 V
V
GS
= +12 V, V
DS
= 0 V
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
20
–20
V
BV
DSS
===
T
J
I
DSS
14
–17
mV/
°
C
1
–1
μ
A
I
GSS
+100
+100
nA
On Characteristics
V
GS(th)
(Note 2)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250 μA
V
DS
= V
GS
, I
D
= –250 μA
I
D
= 250 μA, Referenced to 25
°
C
I
D
= –250 μA, Referenced to 25
°
C
V
GS
= 4.5 V, I
D
= 6 A
V
GS
= 2.5 V, I
D
= 5 A
V
GS
= 4.5 V, I
D
= 6 A, T
J
= 125
°
C
V
GS
= –4.5 V, I
D
= –4.4 A
V
GS
= –2.5 V, I
D
= –3.3 A
V
GS
= –4.5 V, I
D
= –4.4 A, T
J
= 125
°
C
V
GS
= 4.5 V, V
DS
= 5 V
V
GS
= –4.5 V, V
DS
= –5 V
V
DS
= 5 V, I
D
= 6 A
V
DS
= –5 V, I
D
= –4.4 A
Q1
Q2
Q1
Q2
Q1
0.4
–0.4
1.0
–1.0
–3.3
3.1
14
19
19
28
43
39
1.5
–1.5
V
V
GS(th)
===
T
J
R
DS(on)
Gate Threshold Voltage
Temperature Coefficient
Static Drain-Source
On-Resistance
mV/
°
C
18
28
29
35
57
56
m
Q2
m
I
D(on)
On-State Drain Current
Q1
Q2
Q1
Q2
30
–30
A
g
FS
Forward Transconductance
30
17
S
Dynamic Characteristics
C
iss
Input Capacitance
Q1
Q2
Q1
Q2
Q1
Q2
1325
1330
358
552
168
153
pF
C
oss
Output Capacitance
pF
C
rss
Reverse Transfer
Capacitance
Q1:
V
= 10 V, V
GS
= 0 V,
f = 1.0 MHz
Q2:
V
= –10 V, V
GS
= 0 V,
f = 1.0 MHz
pF
Switching Characteristics
t
d(on)
Turn-On Delay Time
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
6
12
11
19
32
60
19
37
14
14
2.6
3.0
3.7
3.9
20
25
40
40
60
100
34
70
20
20
ns
t
r
Turn-On Rise Time
ns
t
d(off)
Turn-Off Delay Time
ns
t
f
Turn-Off Fall Time
Q1:
V
DD
= 10 V, I
D
= 1 A,
V
GS
= 4.5V, R
GEN
= 6
Q2:
V
DD
= –10 V, I
D
= –1 A,
V
GS
= –4.5V, R
GEN
= 6
ns
Q
g
Total Gate Charge
nC
Q
gs
Gate-Source Charge
nC
Q
gd
Gate-Drain Charge
Q1:
V
DS
= 10 V, I
D
= 6 A,
V
= 4.5 V
Q2:
V
DS
= –5 V, I
D
= –4.4 A,
V
GS
= –4.5 V
nC
F
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相關代理商/技術參數 |
參數描述 |
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| FDW2520C | 功能描述:MOSFET PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDW2520C | 制造商:Fairchild Semiconductor Corporation 功能描述:TSSOP-8 COMPLEMENTARY NCH 20V 300AGA |
| FDW2520C | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET |
| FDW2520C_08 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Complementary PowerTrench MOSFET |
| FDW2520C_Q | 功能描述:MOSFET PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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