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參數(shù)資料
| 型號： | FDZ2553NZ |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | Monolithic Common Drain N-Channel 2.5V Specified PowerTrench BGA MOSFET |
| 中文描述： | 9.6 A, 20 V, 0.014 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ULTRA THIN, BGA-18 |
| 文件頁數(shù)： | 1/6頁 |
| 文件大小： | 155K |
| 代理商： | FDZ2553NZ |
July 2003
2003 Fairchild Semiconductor Corporation
FDZ2553NZ Rev C (W)
FDZ2553NZ
Monolithic Common Drain N-Channel 2.5V Specified PowerTrench
ò
BGA MOSFET
General Description
Combining
PowerTrench process with state-of-the-art
packaging, the FDZ2553N minimizes both PCB space
and R
. This common drain BGA MOSFET
embodies a breakthrough in packaging technology
which enables the device to combine excellent thermal
transfer characteristics, high current handling capability,
ultra-low profile packaging, low gate charge, and low
R
DS(ON)
.
Fairchild’s
advanced
2.5V
specified
BGA
Applications
Battery management
Load switch
Battery protection
Features
9.6 A, 20 V.
R
DS(ON)
= 14 m
@ V
GS
= 4.5 V
R
DS(ON)
= 20 m
@ V
GS
= 2.5 V
Occupies only 0.10 cm
2
of PCB area:
1/3 the area of SO-8.
Ultra-thin package: less than 0.70 mm height when
mounted to PCB.
ESD protection diode (note 3)
Outstanding thermal transfer characteristics:
significantly better than SO-8.
Ultra-low Q
g
x R
DS(ON)
figure-of-merit
High power and current handling capability
Q2
Q1
Pin 1
G
S
D
D
S
S
S
D
S
S
S
S
G
S
S
D
D
D
Bottom
Pin 1
Top
Absolute Maximum Ratings
T
A
=25
o
C unless other wise noted
Symbol
Parameter
V
DSS
Drain-Source Voltage
V
GSS
Gate-Source Voltage
I
D
Drain Current – Continuous
– Pulsed
P
D
Power Dissipation (Steady State)
T
J
, T
STG
Operating and Storage Junction Temperature Range
Ratings
20
±
12
9.6
20
2.1
–55 to +150
Units
V
V
A
W
°
C
(Note 1a)
(Note 1a)
Thermal Characteristics
R
θ
JA
Thermal Resistance, Junction-to-Ambient
R
θ
JB
Thermal Resistance, Junction-to-Ball
R
θ
JC
Thermal Resistance, Junction-to-Case
Package Marking and Ordering Information
Device Marking
Device
2553NZ
FDZ2553NZ
(Note 1a)
60
6.3
0.6
°
C/W
(Note 1)
(Note 1)
Reel Size
7’’
Tape width
12mm
Quantity
3000 units
F
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FDZ2553NZ_Q | 功能描述:MOSFET 20V/12V NCh Monolith Common Drain BGa RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDZ2554P | 功能描述:MOSFET 20V/12V PCh Monolith Common Drain BGa RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDZ2554P_07 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Monolithic Common Drain P-Channel 2.5V Specified PowerTrench BGA MOSFET |
| FDZ2554P_Q | 功能描述:MOSFET 20V/12V PCh Monolith Common Drain BGa RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDZ2554PZ | 功能描述:MOSFET 20/12V P-Ch Monolith Common Drain BGa RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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