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參數(shù)資料
| 型號： | FDZ291P |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | P-Channel 1.5 V Specified PowerTrench BGA MOSFET |
| 中文描述： | 4.6 A, 20 V, 0.04 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ULTRA THIN, BGA-9 |
| 文件頁數(shù)： | 1/6頁 |
| 文件大小： | 170K |
| 代理商： | FDZ291P |
October 2005
FDZ291P
P-Channel 1.5 V Specified PowerTrench
BGA MOSFET
2005 Fairchild Semiconductor Corporation
FDZ291P Rev. C1 (W)
General Description
Combining
PowerTrench process with state of the art BGA
packaging, the FDZ291P minimizes both PCB space
and R
. This BGA MOSFET embodies a
breakthrough in packaging technology which enables
the device to combine excellent thermal transfer
characteristics, high current handling capability, ultra-
low profile packaging, low gate charge, and low R
DS(ON)
.
Fairchild’s
advanced
1.5V
specified
Applications
Battery management
Load switch
Battery protection
Features
–4.6 A, –20 V R
DS(ON)
= 40 m
@ V
GS
= –4.5 V
R
DS(ON)
= 60 m
@ V
GS
= –2.5 V
R
DS(ON)
= 160 m
@ V
GS
= –1.5 V
Occupies only 2.25 mm
2
of PCB area.
Less than 50% of the area of a SSOT-6
Ultra-thin package: less than 0.85 mm height when
mounted to PCB
Outstanding thermal transfer characteristics:
4 times better than SSOT-6
Ultra-low Q
g
x R
DS(ON)
figure-of-merit
High power and current handling capability.
GATE
Bottom
Top
S
D
G
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol
Parameter
V
DSS
Drain-Source Voltage
V
GSS
Gate-Source Voltage
Drain Current – Continuous
I
D
– Pulsed
Power Dissipation for Single Operation
T
J
, T
STG
Operating and Storage Junction Temperature Range
Ratings
–20
±
8
–4.6
–10
1.7
–55 to +150
Units
V
V
A
(Note 1a)
P
D
(Note 1a)
W
°
C
Thermal Characteristics
R
θ
JA
Thermal Resistance, Junction-to-Ambient
R
θ
JC
Thermal Resistance, Junction-to-Case
(Note 1a)
72
2
°
C/W
(Note 1a)
Package Marking and Ordering Information
Device Marking
Device
D
FDZ291P
Reel Size
7”
Tape width
8mm
Quantity
3000 units
F
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| FDZ291P_06 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:P-Channel 1.5 V Specified PowerTrench㈢ BGA MOSFET |
| FDZ293P | 功能描述:MOSFET 2.5V PCH BGA 1.5x1.5 SPECIFIED POWRTRENCH RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDZ293P_06 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:P-Channel 2.5 V Specified PowerTrench㈢ BGA MOSFET |
| FDZ294N | 功能描述:MOSFET LOW_VOLTAGE RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDZ294P | 制造商:Fairchild Semiconductor Corporation 功能描述: |
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