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參數資料
型號: FDZ293P
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: JFETs
英文描述: P-Channel 2.5 V Specified PowerTrench BGA MOSFET
中文描述: 4.6 A, 20 V, 0.046 ohm, P-CHANNEL, Si, POWER, MOSFET
封裝: ULTRA THIN, BGA-9
文件頁數: 3/7頁
文件大小: 376K
代理商: FDZ293P
3
www.fairchildsemi.com
FDZ293P Rev. C
F
fi
e
Notes:
1. R
θ
JA
is determined with the device mounted on a 1 in
The thermal resistance from the junction to the circuit board side of the solder ball, R
For R
θ
JC
, the thermal reference point for the case is defined as the top surface of the copper chip carrier. R
R
θ
JB
are guaranteed by design while R
θ
JA
is determined by the user's board design.
2
2 oz. copper pad on a 1.5 x 1.5 in. board of FR-4 material.
θ
JB
, is defined for reference.
θ
JC
and
2. Pulse Test: Pulse Width < 300
μ
s, Duty Cycle < 2.0%
Drain
Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain
Source Diode Forward Current
1.4
A
I
S
V
V
SD
t
rr
Q
rr
Drain
Source Diode Forward Voltage V
GS
= 0V, I
S
=
1.4A
(Note 2)
Diode Reverse Recovery Time
0.7
1.2
I
F
=
4.6A,
d
iF
/d
t
= 100A/μs
17
nS
Diode Reverse Recovery Charge
5
nC
a) 72
C/W when
mounted on a
1in2 pad of 2 oz
copper, 1.5
x
1.5
x 0.062
thick PCB
b) 157
C/W when
mounted on a
minimum pad of 2 oz
copper
Electrical Characteristics
T
A
= 25
°
C unless otherwise noted (Continued)
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相關代理商/技術參數
參數描述
FDZ293P_06 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:P-Channel 2.5 V Specified PowerTrench㈢ BGA MOSFET
FDZ294N 功能描述:MOSFET LOW_VOLTAGE RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDZ294P 制造商:Fairchild Semiconductor Corporation 功能描述:
FDZ295P 制造商:Fairchild Semiconductor Corporation 功能描述:
FDZ298N 功能描述:MOSFET 20V/12V NCh MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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