
Aug.1998
On-state voltage
Repetitive peak reverse current
Repetitive peak off-state current
Reverse gate current
Critical rate of rise of off-state voltage
Delay time
Storage time
Peak gate turn-off current
Gate trigger current
Gate trigger voltage
Thermal resistance
3.5
100
150
100
—
3
3
—
4.0
1.5
0.01
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
1000
—
—
—
—
—
—
V
TM
I
RRM
I
DRM
I
GRM
d
v
/d
t
t
d
t
s
I
GQ
I
GT
V
GT
R
th(j-f)
V
mA
mA
mA
V/
μ
s
μ
s
μ
s
A
A
V
°
C/W
I
T
= 3000A, T
j
= 125
°
C
V
RM
= 19V, T
j
= 125
°
C
V
DM
= 4500V, V
GK
= –2V, T
j
= 125
°
C
V
RG
= 19V, T
j
= 125
°
C
V
D
= 2250V, T
j
= 125
°
C, V
GK
= –2V (Expo. ware)
I
T
= 3000A, V
D
= 2250V, I
GM
= 100A, T
j
= 125
°
C
d
i
/d
t
= 500A/
μ
s, d
iG
/d
t
= 50A/
μ
s
C
S
= 3
μ
s, R
S
= 5
I
T
= 3000A, V
DM
= 3375V, V
D
= 2250V
d
iGQ
/d
t
= 6000A/
μ
s, C
S
= 3.0
μ
F, L
S
= 0.4
μ
H
T
j
= 125
°
C
MITSUBISHI GATE COMMUTATED TURN-OFF THYRISTORS
FG4000HX-90DS
HIGH POWER INVERTER USE
PRESS PACK TYPE
ELECTRICAL CHARACTERISTICS
Symbol
Parameter
Test conditions
Limits
Typ
Min
Max
Unit
PERFORMANCE CURVES
MAXIMUM ON-STATE CHARACTERISTIC
O
ON-STATE VOLTAGE (V)
RATED SURGE ON-STATE CURRENT
S
CONDUCTION TIME
(CYCLES AT 60Hz)
GATE CHARACTERISTICS
G
GATE CURRENT (mA)
MAXIMUM THERMAL IMPEDANCE
CHARACTERISTIC
(JUNCTION TO FIN)
2 3
10
0
5 7
10
1
T
TIME (S)
0
1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0
10
4
7
5
3
2
10
3
7
5
3
2
10
2
7
5
3
2
10
1
T
j
= 125°C
30
24
21
18
12
3
0
10
0
9
6
15
27
2
3
5 7
10
1
2
3
5 7
10
2
10
0
2 3
10
0
5 7
10
1
2 3
5 7
10
2
2 3
5 7
10
3
10
2
7
5
3
2
10
1
7
5
3
2
7
5
3
2
10
–1
V
FGM
= 10V
V
GT
= 1.5V
P
FG(AV)
= 200W
I
FGM
= 1000A
T
j
= 25°C
I
GT
= 4.0A
P
FGM
= 10kW
0.015
0
10
–3
2 3
5 7
10
–2
2 3
5 7
10
–1
2 3
5 7
10
0
0.006
0.009
0.012
0.003
Junction to fin
DC METHOD : V
D
= 24V, R
L
= 0.1
, T
j
= 25
°
C