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參數資料
| 型號： | FGA25N120AND |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | IGBT |
| 中文描述： | 40 A, 1200 V, N-CHANNEL IGBT |
| 封裝： | TO-3P, 3 PIN |
| 文件頁數： | 1/9頁 |
| 文件大小： | 867K |
| 代理商： | FGA25N120AND |
2005 Fairchild Semiconductor Corporation
FGA25N120ANTD Rev. B
1
www.fairchildsemi.com
F
August 2005
FGA25N120ANTD
1200V NPT Trench IGBT
Features
NPT Trench Technology, Positive temperature coefficient
Low saturation voltage: V
CE(sat), typ
= 2.0V
@ I
C
= 25A and T
C
= 25
°
C
Low switching loss: E
off, typ
= 0.96mJ
@ I
C
= 25A and T
C
= 25
C
Extremely enhanced avalanche capability
Description
Using Fairchild's proprietary trench design and advanced NPT
technology, the 1200V NPT IGBT offers superior conduction
and switching performances, high avalanche ruggedness and
easy parallel operation.
This device is well suited for the resonant or soft switching
application such as induction heating, microwave oven, etc.
Absolute Maximum Ratings
Thermal Characteristics
G
C
E
G C E
TO-3P
Symbol
Description
FGA25N120ANTD
Units
V
CES
V
GES
I
C
Collector-Emitter Voltage
1200
V
Gate-Emitter Voltage
±
20
V
Collector Current
@ T
C
= 25
°
C
@ T
C
= 100
°
C
50
A
Collector Current
25
A
I
CM
I
F
I
FM
P
D
Pulsed Collector Current
(Note 1)
75
A
Diode Continuous Forward Current
@ T
C
= 100
°
C
25
A
Diode Maximum Forward Current
150
A
Maximum Power Dissipation
@ T
C
= 25
°
C
@ T
C
= 100
°
C
312
W
Maximum Power Dissipation
125
W
T
J
T
stg
T
L
Operating Junction Temperature
-55 to +150
°
C
°
C
°
C
Storage Temperature Range
-55 to +150
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
300
Symbol
Parameter
Typ.
Max.
Units
R
θ
JC
R
θ
JC
R
θ
JA
Thermal Resistance, Junction-to-Case for IGBT
--
0.4
°
C
/
W
°
C
/
W
°
C
/
W
Thermal Resistance, Junction-to-Case for Diode
--
2.0
Thermal Resistance, Junction-to-Ambient
--
40
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相關代理商/技術參數 |
參數描述 |
|---|---|
| FGA25N120ANDTU | 功能描述:IGBT 晶體管 Copak Discrete RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| FGA25N120ANTD | 制造商:Fairchild Semiconductor Corporation 功能描述:IGBT TO-3P TUBE 30 制造商:Fairchild Semiconductor Corporation 功能描述:IGBT NPT 1200V 50A TO-3PN 制造商:Fairchild Semiconductor Corporation 功能描述:IGBT, NPT, 1200V, 50A, TO-3PN 制造商:Fairchild Semiconductor Corporation 功能描述:IGBT, NPT, 1200V, 50A, TO-3PN, Transistor Type:IGBT, DC Collector Current:50A, C 制造商:Fairchild Semiconductor Corporation 功能描述:IGBT,NPT,TO-3PN, Transistor Type:IGBT, DC Collector Current:50A, Collector Emitter Voltage Vces:2.5V, Power Dissipation Pd:312W, Collector Emitter Voltage V(br)ceo:1.2kV, Operating Temperature Range:-55C to +150C, Transistor Case , RoHS Compliant: Yes |
| FGA25N120ANTD_07 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:1200V NPT Trench IGBT |
| FGA25N120ANTD_F109 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:1200V NPT Trench IGBT |
| FGA25N120ANTDTU | 功能描述:IGBT 晶體管 Copak Discrete RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
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