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參數資料
| 型號： | FGA25N120AND |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | IGBT |
| 中文描述： | 40 A, 1200 V, N-CHANNEL IGBT |
| 封裝： | TO-3P, 3 PIN |
| 文件頁數： | 4/9頁 |
| 文件大小： | 867K |
| 代理商： | FGA25N120AND |
4
www.fairchildsemi.com
FGA25N120ANTD Rev. B
F
Typical Performance Characteristics
Figure 1. Typical Output Characteristics
Figure 2. Typical Saturation Voltage
Characteristics
Figure 3. Saturation Voltage vs. Case
Temperature at Variant Current Level
Figure 4. Saturation Voltage vs. V
GE
Figure 5. Saturation Voltage vs. V
GE
Figure 6. Saturation Voltage vs. V
GE
0
1
2
3
4
5
0
20
40
60
80
100
120
Common Emitter
V
GE
= 15V
T
C
= 25
°
C
T
C
= 125
°
C
C
C
Collector-Emitter Voltage, V
CE
[V]
0
2
4
6
8
10
0
20
40
60
80
100
120
140
160
180
10V
9V
8V
7V
20V
17V
15V 12V
V
GE
= 6V
T
C
= 25
°
C
C
C
Collector-Emitter Voltage, V
CE
[V]
25
50
75
100
125
1.5
2.0
2.5
3.0
Common Emitter
V
GE
= 15V
40A
I
C
= 25A
C
C
Case Temperature, T
C
[
°
C]
0
4
8
12
16
20
0
4
8
12
16
20
40A
25A
Common Emitter
T
C
= -40
°
C
I
C
= 12.5A
C
C
Gate-Emitter Voltage, V
GE
[V]
0
4
8
12
16
20
0
4
8
12
16
20
40A
25A
Common Emitter
T
C
= 125
°
C
I
C
= 12.5A
C
C
Gate-Emitter Voltage, V
GE
[V]
0
4
8
12
16
20
0
4
8
12
16
20
40A
25A
Common Emitter
T
C
= 25
°
C
I
C
= 12.5A
C
C
Gate-Emitter Voltage, V
GE
[V]
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相關代理商/技術參數 |
參數描述 |
|---|---|
| FGA25N120ANDTU | 功能描述:IGBT 晶體管 Copak Discrete RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| FGA25N120ANTD | 制造商:Fairchild Semiconductor Corporation 功能描述:IGBT TO-3P TUBE 30 制造商:Fairchild Semiconductor Corporation 功能描述:IGBT NPT 1200V 50A TO-3PN 制造商:Fairchild Semiconductor Corporation 功能描述:IGBT, NPT, 1200V, 50A, TO-3PN 制造商:Fairchild Semiconductor Corporation 功能描述:IGBT, NPT, 1200V, 50A, TO-3PN, Transistor Type:IGBT, DC Collector Current:50A, C 制造商:Fairchild Semiconductor Corporation 功能描述:IGBT,NPT,TO-3PN, Transistor Type:IGBT, DC Collector Current:50A, Collector Emitter Voltage Vces:2.5V, Power Dissipation Pd:312W, Collector Emitter Voltage V(br)ceo:1.2kV, Operating Temperature Range:-55C to +150C, Transistor Case , RoHS Compliant: Yes |
| FGA25N120ANTD_07 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:1200V NPT Trench IGBT |
| FGA25N120ANTD_F109 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:1200V NPT Trench IGBT |
| FGA25N120ANTDTU | 功能描述:IGBT 晶體管 Copak Discrete RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
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