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參數(shù)資料
| 型號： | FGA25N120AND |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | IGBT |
| 中文描述： | 40 A, 1200 V, N-CHANNEL IGBT |
| 封裝： | TO-3P, 3 PIN |
| 文件頁數(shù)： | 6/9頁 |
| 文件大小： | 867K |
| 代理商： | FGA25N120AND |
6
www.fairchildsemi.com
FGA25N120ANTD Rev. B
F
Typical Performance Characteristics
(Continued)
Figure 13. Switching Loss vs. Collector Current
Figure 14. Gate Charge Characteristics
Figure 15. SOA Characteristics
Figure 16. Turn-Off SOA
Figure 17. Transient Thermal Impedance of IGBT
10
20
30
40
50
0.1
1
10
Common Emitter
V
GE
=
±
15V, R
G
= 10
T
C
= 25
°
C
T
C
= 125
°
C
Eon
Eoff
S
Collector Current, I
C
[A]
0
20
40
60
80
100
120
140
160
180
200
0
2
4
6
8
10
12
14
16
600V
400V
Common Emitter
R
L
= 24
T
C
= 25
°
C
Vcc = 200V
G
G
Gate Charge, Q
g
[nC]
1
10
100
1000
1
10
100
Safe Operating Area
V
GE
= 15V, T
C
= 125
°
C
C
C
Collector-Emitter Voltage, V
CE
[V]
0.1
1
10
100
1000
0.01
0.1
1
10
100
50
μ
s
100
μ
s
1ms
DC Operation
Ic MAX (Pulsed)
Ic MAX (Continuous)
Single Nonrepetitive
Pulse T
C
= 25
°
C
Curves must be derated
linearly with increase
in temperature
C
Collector - Emitter Voltage, V
CE
[V]
1E-5
1E-4
1E-3
0.01
0.1
1
10
1E-3
0.01
0.1
1
10
0.1
0.05
0.5
0.2
0.02
0.01
single pulse
T
a
e
R
ectangular Pulse D
uration [sec]
Pdm
t1
t2
Duty factor D = t1 / t2
Peak Tj = Pdm
Zthjc + T
C
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FGA25N120ANDTU | 功能描述:IGBT 晶體管 Copak Discrete RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| FGA25N120ANTD | 制造商:Fairchild Semiconductor Corporation 功能描述:IGBT TO-3P TUBE 30 制造商:Fairchild Semiconductor Corporation 功能描述:IGBT NPT 1200V 50A TO-3PN 制造商:Fairchild Semiconductor Corporation 功能描述:IGBT, NPT, 1200V, 50A, TO-3PN 制造商:Fairchild Semiconductor Corporation 功能描述:IGBT, NPT, 1200V, 50A, TO-3PN, Transistor Type:IGBT, DC Collector Current:50A, C 制造商:Fairchild Semiconductor Corporation 功能描述:IGBT,NPT,TO-3PN, Transistor Type:IGBT, DC Collector Current:50A, Collector Emitter Voltage Vces:2.5V, Power Dissipation Pd:312W, Collector Emitter Voltage V(br)ceo:1.2kV, Operating Temperature Range:-55C to +150C, Transistor Case , RoHS Compliant: Yes |
| FGA25N120ANTD_07 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:1200V NPT Trench IGBT |
| FGA25N120ANTD_F109 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:1200V NPT Trench IGBT |
| FGA25N120ANTDTU | 功能描述:IGBT 晶體管 Copak Discrete RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
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