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參數(shù)資料
| 型號(hào)： | FGB20N6S2D |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類(lèi)： | IGBT 晶體管 |
| 英文描述： | 600V, SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode |
| 中文描述： | 28 A, 600 V, N-CHANNEL IGBT, TO-263AB |
| 封裝： | TO-263AB, 3 PIN |
| 文件頁(yè)數(shù)： | 3/9頁(yè) |
| 文件大小： | 232K |
| 代理商： | FGB20N6S2D |
2002 Fairchild Semiconductor Corporation
FGH20N6S2D / FGP20N6S2D / FGB20N6S2D Rev. A1
F
Typical Performance Curves
Figure 1. DC Collector Current vs Case
Temperature
Figure 2. Minimum Switching Safe Operating Area
Figure 3. Operating Frequency vs Collector to
Emitter Current
Figure 4. Short Circuit Withstand Time
Figure 5. Collector to Emitter On-State Voltage
Figure 6. Collector to Emitter On-State Voltage
T
C
, CASE TEMPERATURE (
o
C)
I
C
,
50
5
0
10
25
75
100
125
150
30
20
15
25
V
GE
= 15V
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
700
0
I
C
,
300
400
200
100
500
600
0
20
30
15
40
T
J
= 150
o
C, R
G
= 25
, V
GE
= 15V, L = 500
μ
H
5
10
35
25
f
M
,
1
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
20
400
20
10
700
100
T
J
= 125
o
C, R
G
= 25
, L = 500
μ
H, V
CE
= 390V
f
MAX1
= 0.05 / (t
d(OFF)I
+ t
d(ON)I
)
f
MAX2
= (P
D
- P
C
) / (E
ON2
+ E
OFF
)
R
JC
= 0.27
o
C/W, SEE NOTES
P
C
= CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
V
GE
= 15V
T
C =
75
o
C
V
GE
= 10V
V
GE
, GATE TO EMITTER VOLTAGE (V)
I
S
,
t
S
,
μ
s
9
11
12
10
6
90
150
13
14
12
8
60
120
180
210
10
15
4
2
t
SC
I
SC
V
CE
= 390V, R
G
= 25
, T
J
= 125
o
C
0.50
1.0
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
I
C
,
0
2
4
1.25
2.0
2.25
8
6
14
T
J
= 25
o
C
0.75
T
J
= 150
o
C
12
1.5
1.75
PULSE DURATION = 250
μ
s
DUTY CYCLE < 0.5%, V
GE
= 15V
T
J
= 125
o
C
10
2.5
2.75
I
C
,
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
0.50
1.0
1.5
2.0
2.5
0.75
T
J
= 150
o
C
1.75
1.25
T
J
= 25
o
C
2.25
0
2
4
8
6
14
12
10
T
J
= 125
o
C
PULSE DURATION = 250
μ
s
DUTY CYCLE < 0.5%, V
GE
= 10V
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| FGP20N6S2D | Switch Mode Power Supply; Output Power:300W; No. of Outputs:1; Output 1 VDC +:5VDC; Output Current 1:60A; Power Supply Mounting:Chassis; Output Current:60A; Output Power Max:300W; Output Voltage:5VDC; Series:JWS RoHS Compliant: Yes |
| FGB20N6S2DT | 600V, SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode |
| FGH20N6S2 | Switch Mode Power Supply; Output Power:120W; No. of Outputs:1; Output 1 VDC +:48VDC; Output Current 1:2.5A; Power Supply Mounting:Chassis; Output Current:2.5A; Output Power Max:120W; Output Voltage:48VDC; Series:JWS RoHS Compliant: Yes |
| FGP20N6S2 | 600V, SMPS II Series N-Channel IGBT |
| FGB20N6S2 | 600V, SMPS II Series N-Channel IGBT |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FGB20N6S2DT | 功能描述:IGBT 晶體管 600V N-Ch IGBT SMPS II Series RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| FGB20N6S2T | 功能描述:IGBT 晶體管 600V N-Channel IGBT SMPS II Series RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| FGB3040CS | 功能描述:馬達(dá)/運(yùn)動(dòng)/點(diǎn)火控制器和驅(qū)動(dòng)器 IGBT EcoSPARK 300mJ 400V NCh Cur Sen Ign RoHS:否 制造商:STMicroelectronics 產(chǎn)品:Stepper Motor Controllers / Drivers 類(lèi)型:2 Phase Stepper Motor Driver 工作電源電壓:8 V to 45 V 電源電流:0.5 mA 工作溫度:- 25 C to + 125 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:HTSSOP-28 封裝:Tube |
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| FGB30N6S2 | 功能描述:IGBT 晶體管 Sgl 600V Ch RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
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