- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄375795 > FGB20N6S2 (FAIRCHILD SEMICONDUCTOR CORP) 600V, SMPS II Series N-Channel IGBT PDF資料下載
參數(shù)資料
| 型號： | FGB20N6S2 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 600V, SMPS II Series N-Channel IGBT |
| 中文描述： | 28 A, 600 V, N-CHANNEL IGBT, TO-263AB |
| 封裝： | TO-263AB, 3 PIN |
| 文件頁數(shù)： | 1/8頁 |
| 文件大小： | 183K |
| 代理商： | FGB20N6S2 |
2003 Fairchild Semiconductor Corporation
August 2003
FGH20N6S2D / FGP20N6S2D / FGB20N6S2D Rev. A2
F
FGH20N6S2 / FGP20N6S2 / FGB20N6S2
600V, SMPS II Series N-Channel IGBT
General Description
The FGH20N6S2, FGP20N6S2, FGB20N6S2, are Low
Gate Charge, Low Plateau Voltage SMPS II IGBTs
combining the fast switching speed of the SMPS IGBTs
along with lower gate charge and plateau voltage and high
avalanche capability (UIS). These LGC devices shorten
delay times, and reduce the power requirement of the gate
drive. These devices are ideally suited for high voltage
switched mode power supply applications where low
conduction loss, fast switching times and UIS capability are
essential. SMPS II LGC devices have been specially
designed for:
Power Factor Correction (PFC) circuits
Full bridge topologies
Half bridge topologies
Push-Pull circuits
Uninterruptible power supplies
Zero voltage and zero current switching circuits
Formerly Developmental Type TA49330.
Features
100kHz Operation at 390V, 7A
200kHZ Operation at 390V, 5A
600V Switching SOA Capability
Typical Fall Time . . . . . . . . . . 85ns at TJ = 125
o
C
Low Gate Charge . . . . . . . . . 30nC at V
GE
= 15V
Low Plateau Voltage . . . . . . . . . . . . .6.5V Typical
UIS Rated . . . . . . . . . . . . . . . . . . . . . . . . . 100mJ
Low Conduction Loss
Low E
on
Device Maximum Ratings
T
C
= 25°C unless otherwise noted
Symbol
BV
CES
I
C25
I
C110
I
CM
V
GES
V
GEM
SSOA
E
AS
E
ARV
P
D
Parameter
Ratings
600
28
13
40
±20
±30
35 at 600V
100
100
125
1.0
-55 to 150
-55 to 150
Units
V
A
A
A
V
V
A
mJ
mJ
W
W/°C
°C
°C
Collector to Emitter Breakdown Voltage
Collector Current Continuous, T
C
= 25°C
Collector Current Continuous, T
C
= 110°C
Collector Current Pulsed (Note 1)
Gate to Emitter Voltage Continuous
Gate to Emitter Voltage Pulsed
Switching Safe Operating Area at T
J
= 150°C, Figure 2
Pulsed Avalanche Energy, I
CE
= 7.0A, L = 4mH, V
DD
= 50V
Pulsed Avalanche Energy, I
CE
= 7.0A, L = 4mH, V
DD
= 50V
Power Dissipation Total T
C
= 25°C
Power Dissipation Derating T
C
> 25°C
Operating Junction Temperature Range
Storage Junction Temperature Range
CAUTION: Stresses above those listed in “Device Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and
operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. Pulse width limited by maximum junction temperature.
T
J
T
STG
Package
Symbol
C
E
G
TO-247
E
C
G
TO-263AB
TO-220AB
E
C
G
E
G
COLLECTOR
(Flange)
COLLECTOR
(Back-Metal)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| FGH30N6S2D | 600V, SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode |
| FGP30N6S2D | Switch Mode Power Supply; Output Power:198W; No. of Outputs:1; Output 1 VDC +:3VDC; Output Current 1:60A; Power Supply Mounting:Chassis; Output Current:60A; Output Power Max:198W; Output Voltage:3VDC; Series:JWS RoHS Compliant: Yes |
| FGB30N6S2D | 600V, SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode |
| FGH30N6S2 | 600V, SMPS II Series N-Channel IGBT |
| FGP30N6S2 | 600V, SMPS II Series N-Channel IGBT |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FGB20N6S2D | 功能描述:IGBT 晶體管 Comp N-Ch 600V RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| FGB20N6S2DT | 功能描述:IGBT 晶體管 600V N-Ch IGBT SMPS II Series RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| FGB20N6S2T | 功能描述:IGBT 晶體管 600V N-Channel IGBT SMPS II Series RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| FGB3040CS | 功能描述:馬達(dá)/運(yùn)動/點(diǎn)火控制器和驅(qū)動器 IGBT EcoSPARK 300mJ 400V NCh Cur Sen Ign RoHS:否 制造商:STMicroelectronics 產(chǎn)品:Stepper Motor Controllers / Drivers 類型:2 Phase Stepper Motor Driver 工作電源電壓:8 V to 45 V 電源電流:0.5 mA 工作溫度:- 25 C to + 125 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:HTSSOP-28 封裝:Tube |
| FGB3040CS_12 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:EcoSPARKTM 300mJ, 400V, N-Channel Current Sensing Ignition IGBT |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。