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參數(shù)資料
| 型號： | FGB20N6S2 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 600V, SMPS II Series N-Channel IGBT |
| 中文描述： | 28 A, 600 V, N-CHANNEL IGBT, TO-263AB |
| 封裝： | TO-263AB, 3 PIN |
| 文件頁數(shù)： | 5/8頁 |
| 文件大小： | 183K |
| 代理商： | FGB20N6S2 |
2003 Fairchild Semiconductor Corporation
FGH20N6S2D / FGP20N6S2D / FGB20N6S2D Rev. A2
F
Figure 13. Transfer Characteristic
Figure 14. Gate Charge
Figure 15. Total Switching Loss vs Case
Temperature
Figure 16. Total Switching Loss vs Gate
Resistance
Figure 17. Capacitance vs Collector to Emitter
Voltage
Figure 18. Collector to Emitter On-State Voltage vs
Gate to Emitter Voltage
Typical Performance Curves
(Continued)
I
C
,
0
20
40
V
GE
, GATE TO EMITTER VOLTAGE (V)
60
120
T
J
= 125
o
C
T
J
= -55
o
C
100
80
T
J
= 25
o
C
PULSE DURATION = 250
μ
s
DUTY CYCLE < 0.5%, V
CE
= 10V
6
8
10
12
14
16
4
V
G
,
Q
G
, GATE CHARGE (nC)
I
G(REF)
= 1mA, R
L
= 42.6
, T
J
= 25
o
C
V
CE
= 200V
V
CE
= 600V
V
CE
= 400V
5
10
15
20
25
35
0
30
6
4
8
0
16
12
10
14
2
T
C
, CASE TEMPERATURE (
o
C)
E
T
,
m
J
R
G
= 25
, L = 500
μ
H, V
CE
= 390V, V
GE
= 15V
E
TOTAL
= E
ON2
+ E
OFF
I
CE
= 14A
I
CE
= 7A
I
CE
= 3A
0.2
0
0.8
0.6
0.4
50
25
75
100
125
150
R
G
, GATE RESISTANCE (
)
E
T
,
m
J
E
TOTAL
= E
ON2
+ E
OFF
T
J
= 125
o
C, L = 500
μ
H, V
CE
= 390V, V
GE
= 15V
0.1
0.05
10
1
I
CE
= 14A
1
10
100
1000
I
CE
= 7A
I
CE
= 3A
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
C
C
RES
0
10
20
30
40
50
0.0
0.4
1.2
0.8
FREQUENCY = 1MHz
C
OES
C
IES
60
70
80
90
100
0.2
0.6
1.0
V
GE
, GATE TO EMITTER VOLTAGE (V)
6
2.0
9
2.2
2.6
2.4
8
10
11
12
16
2.8
V
C
,
PULSE DURATION = 250
μ
s, T
J
= 25
o
C
3.6
7
13
14
15
DUTY CYCLE < 0.5%
I
CE
= 14A
5
I
CE
= 3A
I
CE
= 7A
3.0
3.2
3.4
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