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參數資料
| 型號： | FGB30N6S2D |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 600V, SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode |
| 中文描述： | 45 A, 600 V, N-CHANNEL IGBT, TO-263AB |
| 封裝： | PLASTIC, D2PAK-3 |
| 文件頁數： | 1/12頁 |
| 文件大小： | 281K |
| 代理商： | FGB30N6S2D |
2001 Fairchild Semiconductor Corporation
July 2001
FGH30N6S2D / FGP30N6S2D / FGB30NS2D Rev. A
F
FGH30N6S2D / FGP30N6S2D / FGB30N6S2D
600V, SMPS II Series N-Channel IGBT with Anti-Parallel Stealth
TM
Diode
General Description
The FGH30N6S2D, FGP30N6S2D, and FGB30N6S2D are
Low Gate Charge, Low Plateau Voltage SMPS II IGBTs
combining the fast switching speed of the SMPS IGBTs
along with lower gate charge and plateau voltage and ava-
lanche capability (UIS). These LGC devices shorten delay
times, and reduce the power requirement of the gate drive.
These devices are ideally suited for high voltage switched
mode power supply applications where low conduction
loss, fast switching times and UIS capability are essential.
SMPS II LGC devices have been specially designed for:
Power Factor Correction (PFC) circuits
Full bridge topologies
Half bridge topologies
Push-Pull circuits
Uninterruptible power supplies
Zero voltage and zero current switching circuits
IGBT formerly Developmental Type TA49336
Diode formerly Developmental Type TA49390
Features
100kHz Operation at 390V, 14A
200kHZ Operation at 390V, 9A
600V Switching SOA Capability
Typical Fall Time. . . . . . . . . . .90ns at TJ = 125
o
C
Low Gate Charge . . . . . . . . . 23nC at V
GE
= 15V
Low Plateau Voltage . . . . . . . . . . . . .6.5V Typical
UIS Rated . . . . . . . . . . . . . . . . . . . . . . . . . 150mJ
Low Conduction Loss
Device Maximum Ratings
T
C
= 25°C unless otherwise noted
Symbol
BV
CES
I
C25
I
C110
I
CM
V
GES
V
GEM
SSOA
E
AS
P
D
Parameter
Ratings
600
45
20
108
±20
±30
60A at 600V
150
167
1.33
-55 to 150
-55 to 150
Units
V
A
A
A
V
V
Collector to Emitter Breakdown Voltage
Collector Current Continuous, T
C
= 25°C
Collector Current Continuous, T
C
= 110°C
Collector Current Pulsed (Note 1)
Gate to Emitter Voltage Continuous
Gate to Emitter Voltage Pulsed
Switching Safe Operating Area at T
J
= 150°C, Figure 2
Pulsed Avalanche Energy, I
CE
= 12A, L = 2mH, V
DD
= 50V
Power Dissipation Total T
C
= 25°C
Power Dissipation Derating T
C
> 25°C
Operating Junction Temperature Range
Storage Junction Temperature Range
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and
operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. Pulse width limited by maximum junction temperature.
mJ
W
W/°C
°C
°C
T
J
T
STG
Package
JEDEC STYLE TO-247
Symbol
G
C
E
C
E
G
JEDEC STYLE TO-220AB
G
C
E
JEDEC STYLE TO-263AB
G
C
E
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相關代理商/技術參數 |
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| FGB30N6S2DT | 功能描述:IGBT 晶體管 600V N-Ch IGBT SMPS II Series RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| FGB30N6S2T | 功能描述:IGBT 晶體管 600V N-Channel IGBT SMPS II Series RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| FGB3236 | 制造商:Rochester Electronics LLC 功能描述: 制造商:Fairchild Semiconductor Corporation 功能描述: |
| FGB3236_F085 | 功能描述:IGBT 晶體管 320MJ 360V N-CH IGNITION IGBT RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| FGB40N60SM | 功能描述:IGBT 晶體管 600V 40A FIELD STOP PLANAR IGBT GEN2 RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
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