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參數資料
| 型號： | FGB30N6S2D |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 600V, SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode |
| 中文描述： | 45 A, 600 V, N-CHANNEL IGBT, TO-263AB |
| 封裝： | PLASTIC, D2PAK-3 |
| 文件頁數： | 2/12頁 |
| 文件大?。?/td> | 281K |
| 代理商： | FGB30N6S2D |
2001 Fairchild Semiconductor Corporation
FGH30N6S2D / FGP30N6S2D / FGB30NS2D Rev. A
F
Package Marking and Ordering Information
Electrical Characteristics
T
J
= 25°C unless otherwise noted
Off State Characteristics
BV
CES
Collector to Emitter Breakdown Voltage
I
CES
Collector to Emitter Leakage Current
On State Characteristics
V
CE(SAT)
Collector to Emitter Saturation Voltage
Dynamic Characteristics
Q
G(ON)
Gate Charge
Switching Characteristics
SSOA
Switching SOA
Thermal Characteristics
R
θ
JC
Thermal Resistance Junction-Case
Device Marking
30N6S2D
30N6S2D
30N6S2D
Device
FGB30N6S2D
FGP30N6S2D
FGH30N6S2D
Package
TO-263AB
TO-220AB
TO-247
Tape Width
24mm
-
Quantity
800
-
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
I
C
= 250
μ
A, V
GE
= 0
V
CE
= 600V
600
-
-
-
-
-
-
-
-
V
μ
A
mA
nA
T
J
= 25°C
T
J
= 125°C
250
2
±250
I
GES
Gate to Emitter Leakage Current
V
GE
= ± 20V
I
C
= 12A,
V
GE
= 15V
I
EC
= 12A
T
J
= 25°C
T
J
= 125°C
-
-
-
1.95
1.8
2.1
2.5
2.0
2.5
V
V
V
V
EC
Diode Forward Voltage
I
C
= 12A,
V
CE
= 300V
I
C
= 250
μ
A, V
CE
= 600V
I
C
= 12A, V
CE
= 300V
V
GE
= 15V
V
GE
= 20V
-
-
23
26
4.3
6.5
29
33
5.0
8.0
nC
nC
V
V
V
GE(TH)
V
GEP
Gate to Emitter Threshold Voltage
Gate to Emitter Plateau Voltage
3.5
-
T
J
= 150°C, R
G
= 10
,
V
GE
=
15V, L = 100
μ
H, V
CE
= 600V
IGBT and Diode at T
J
= 25°C,
I
CE
=12A,
V
CE
= 390V,
V
GE
= 15V,
R
G
=10
L = 500
μ
H
Test Circuit - Figure 26
60
-
-
A
t
d(ON)I
t
rI
t
d(OFF)I
t
fI
E
ON1
E
ON2
E
OFF
t
d(ON)I
t
rI
t
d(OFF)I
t
fI
E
ON1
E
ON2
E
OFF
t
rr
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Turn-On Energy (Note 2)
Turn-On Energy (Note 2)
Turn-Off Energy (Note 3)
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Turn-On Energy (Note 2)
Turn-On Energy (Note 2)
Turn-Off Energy (Note 3)
Diode Reverse Recovery Time
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
6
10
40
53
55
110
100
11
17
73
90
55
160
250
35
25
-
-
-
-
-
-
ns
ns
ns
ns
μ
J
μ
J
μ
J
ns
ns
ns
ns
μ
J
μ
J
μ
J
ns
ns
150
-
-
100
100
-
200
350
46
32
IGBT and Diode at T
J
= 125°C
I
CE
= 12A,
V
CE
= 390V,
V
GE
= 15V,
R
G
= 10
L = 500
μ
H
Test Circuit - Figure 26
I
EC
= 12A, dI
EC
/dt = 200A/
μ
s
I
EC
= 1A, dI
EC
/dt = 200A/
μ
s
IGBT
Diode
-
-
-
-
0.75
2.0
°C/W
°C/W
NOTE:
Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. E
is the turn-on loss
of the IGBT only. E
is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same T
J
as the IGBT. The diode type is specified in figure 26.
Turn-Off Energy Loss (E
) is defined as the integral of the instantaneous power loss starting at the trailing edge of
the input pulse and ending at the point where the collector current equals zero (I
= 0A). All devices were tested per
JEDEC Standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produc-
es the true total Turn-Off Energy Loss.
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