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參數(shù)資料
| 型號(hào)： | FGB30N6S2D |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 600V, SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode |
| 中文描述： | 45 A, 600 V, N-CHANNEL IGBT, TO-263AB |
| 封裝： | PLASTIC, D2PAK-3 |
| 文件頁(yè)數(shù)： | 4/12頁(yè) |
| 文件大小： | 281K |
| 代理商： | FGB30N6S2D |
2001 Fairchild Semiconductor Corporation
FGH30N6S2D / FGP30N6S2D / FGB30NS2D Rev. A
F
Figure 7. Turn-On Energy Loss vs Collector to
Emitter Current
Figure 8. Turn-Off Energy Loss vs Collector to
Emitter Current
Figure 9. Turn-On Delay Time vs Collector to
Emitter Current
Figure 10. Turn-On Rise Time vs Collector to
Emitter Current
Figure 11. Turn-Off Delay Time vs Collector to
Emitter Current
Figure 12. Fall Time vs Collector to Emitter
Current
Typical Performance Curves
(Continued)
E
O
,
μ
J
200
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
100
250
0
5
10
15
20
25
0
350
300
50
400
T
J
= 125
o
C, V
GE
= 10V, V
GE
= 15V
T
J
= 25
o
C, V
GE
= 10V, V
GE
= 15V
150
R
G
= 10
, L = 500mH, V
CE
= 390V
E
O
μ
J
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
100
300
0
600
5
10
15
20
25
0
500
400
200
R
G
= 10
, L = 500mH, V
CE
= 390V
T
J
= 125
o
C, V
GE
= 10V, V
GE
= 15V
T
J
= 25
o
C, V
GE
= 10V, V
GE
= 15V
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
d
,
0
6
8
12
14
5
10
15
20
25
0
16
4
2
10
R
G
= 10
, L = 500
μ
H, V
CE
= 390V
T
J
= 25
o
C, T
J
= 125
o
C, V
GE
= 10V
T
J
= 25
o
C, T
J
= 125
o
C, V
GE
= 15V
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
r
,
0
20
10
30
25
5
10
15
20
25
0
15
T
J
= 25
o
C, V
GE
= 10V, V
GE
=15V
T
J
= 125
o
C, V
GE
= 15V, V
GE
= 10V
R
G
= 10
, L = 500mH, V
CE
= 390V
5
20
30
40
50
60
70
80
90
0
5
10
15
20
25
t
d
)
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
R
G
= 10
, L = 500
μ
H, V
CE
= 390V
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
f
,
40
60
80
100
10
5
15
20
25
0
120
R
G
= 10
, L = 500
μ
H, V
CE
= 390V
T
J
= 125
o
C, V
GE
= 10V OR 15V
T
J
= 25
o
C, V
GE
= 10V OR 15V
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