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參數(shù)資料
| 型號(hào)： | FGD3N60LSD |
| 廠商： | Fairchild Semiconductor Corporation |
| 英文描述： | IGBT |
| 中文描述： | IGBT的 |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 848K |
| 代理商： | FGD3N60LSD |
2
www.fairchildsemi.com
FGD3N60LSD Rev. A
F
Package Marking and Ordering Information
Electrical Characteristics of the IGBT
T
C
= 25°C unless otherwise noted
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
FGD3N60LSD
FGD3N60LSDTM
D-PAK
380mm
16mm
2500
FGD3N60LSD
FGD3N60LSDTF
D-PAK
380mm
16mm
2000
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
Off Characteristics
BV
CES
B
VCES
/
T
J
I
CES
I
GES
Collector-Emitter Breakdown Voltage
V
GE
= 0V, I
C
= 250uA
V
GE
= 0V, I
C
= 1mA
600
--
--
V
Temperature Coefficient of Breakdown]
Voltage
--
0.6
--
V/
°
C
Collector Cut-Off Current
V
CE
= V
CES
, V
GE
= 0V
V
GE
= V
GES
, V
CE
= 0V
--
--
250
uA
G-E Leakage Current
--
--
± 100
nA
On Characteristics
V
GE(th)
V
CE(sat)
G-E Threshold Voltage
I
C
= 3mA, V
CE
= V
GE
I
C
= 3A
,
V
GE
= 10V
I
C
= 6A
,
V
GE
= 10V
2.5
3.2
5.0
V
Collector to Emitter
Saturation Voltage
--
1.2
1.5
V
--
1.8
--
V
Dynamic Characteristics
C
ies
C
oes
C
res
Input Capacitance
V
CE
= 25V
,
V
GE
= 0V,
f = 1MHz
--
185
--
pF
Output Capacitance
--
20
--
pF
Reverse Transfer Capacitance
--
5.5
--
pF
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
Q
g
Q
ge
Q
gc
L
e
Turn-On Delay Time
V
CC
= 480 V, I
C
= 3A,
R
G
= 470
, V
GE
= 10V,
Inductive Load, T
C
= 25
°
C
--
40
--
ns
Rise Time
--
40
--
ns
Turn-Off Delay Time
--
600
--
ns
Fall Time
--
600
--
ns
Turn-On Switching Loss
--
250
--
uJ
Turn-Off Switching Loss
--
1.00
--
mJ
Total Switching Loss
--
1.25
--
mJ
Turn-On Delay Time
V
CC
= 480 V, I
C
= 3A,
R
G
= 470
, V
GE
= 10V
,
Inductive Load, T
C
= 125
°
C
--
40
--
ns
Rise Time
--
45
--
ns
Turn-Off Delay Time
--
620
--
ns
Fall Time
--
800
--
ns
Turn
-
On Switching Loss
--
300
--
uJ
Turn
-
Off Switching Loss
--
1.9
--
mJ
Total Switching Loss
--
2.2
--
mJ
Total Gate Charge
V
CE
= 480 V, I
C
= 3A,
V
GE
= 10V
--
12.5
--
nC
Gate-Emitter Charge
--
2.8
--
nC
Gate-Collector Charge
--
4.9
--
nC
Internal Emitter Inductance
Measured 5mm from PKG
--
7.5
--
nH
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