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參數資料
| 型號： | FGD3N60LSD |
| 廠商： | Fairchild Semiconductor Corporation |
| 英文描述： | IGBT |
| 中文描述： | IGBT的 |
| 文件頁數： | 6/8頁 |
| 文件大小： | 848K |
| 代理商： | FGD3N60LSD |
6
www.fairchildsemi.com
FGD3N60LSD Rev. A
F
Typical Performance Characteristics
(Continued)
Figure 13. Switching Loss vs. Collector Current
Figure 14. Forward Characteristics
Figure 15. Forward Voltage Drop Vs Tj
Figure 16. SOA Characteristics
Figure 17. Transient Thermal Impedance of IGBT
0
1
2
3
4
0.1
1
10
100
F
F
[
Forward Voltage Drop, V
F
[V]
Tc = 25
°
C
Tc = 100
°
C
2
4
100
1000
Eon
Eoff
S
μ
J
Collector Curre3
C
[A]
Common Emitter
Vcc = 480 V, V
GE
= 10V
R
G
= 470
T
C
= 25
°
C
T
C
= 125
°
C
25
50
75
100
125
1.2
1.6
2.0
2.4
2.8
I
F
=3 A
I
F
=6 A
F
F
Junction Temperature, Tj [
°
C]
I
F
=1.5 A
0.1
1
10
100
1000
0.01
0.1
1
10
100
50
μ
s
100
μ
s
1ms
DC Operation
Ic MAX (Pulsed)
Ic MAX (Continuous)
Single Nonrepetitive
Pulse Tc = 25
°
C
Curves must be derated
linearly with increase
in temperature
C
Collector - Emitter Voltage, V
CE
[V]
1E-5
1E-4
1E-3
0.01
0.1
1
10
0.01
0.1
1
10
Rectangular Pulse Duration [sec]
T
0.5
0.2
0.1
0.05
0.02
0.01
single pulse
Pdm
t1
t2
Duty factor D = t1 / t2
Peak Tj = Pdm
Zthjc + T
C
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相關代理商/技術參數 |
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| FGD3N60UNDF | 功能描述:IGBT 晶體管 600V, 3A Short Circuit Rated IGBT RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| FGD4536 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:360V, PDP IGBT |
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