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參數資料
| 型號： | FGD3N60LSDTM |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | IGBT |
| 中文描述： | 6 A, 600 V, N-CHANNEL IGBT |
| 封裝： | DPAK-3 |
| 文件頁數： | 3/8頁 |
| 文件大?。?/td> | 848K |
| 代理商： | FGD3N60LSDTM |
3
www.fairchildsemi.com
FGD3N60LSD Rev. A
F
Electrical Characteristics of DIODE
T
C
= 25
°
C unless otherwise noted
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
V
FM
Diode Forward Voltage
I
F
= 3A
T
C
= 25
°
C
T
C
= 100
°
C
T
C
= 25
°
C
T
C
= 100
°
C
T
C
= 25
°
C
T
C
= 100
°
C
T
C
= 25
°
C
T
C
= 100
°
C
--
1.5
1.9
V
--
1.55
--
t
rr
Diode Reverse Recovery Time
I
F
= 3A,
di/dt = 100A/us
V
R
= 200V
--
234
--
ns
--
--
--
I
rr
Diode Peak Reverse Recovery Current
--
2.64
--
A
--
--
--
Q
rr
Diode Reverse Recovery Charge
--
309
--
nC
--
--
--
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