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參數資料
| 型號： | FGD3N60LSDTM |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | IGBT |
| 中文描述： | 6 A, 600 V, N-CHANNEL IGBT |
| 封裝： | DPAK-3 |
| 文件頁數： | 4/8頁 |
| 文件大小： | 848K |
| 代理商： | FGD3N60LSDTM |
4
www.fairchildsemi.com
FGD3N60LSD Rev. A
F
Typical Performance Characteristics
Figure 1. Typical Output Characteristics
Figure 2. Typical Output Characteristics
Figure 3. Typical Output Characteristics
Figure 4. Transfer Characteristics
Figure 5. Saturation Voltage vs. Case
Figure 6. Capacitance Characteristics
0
2
4
6
8
0
6
12
18
24
30
20V
15V
10V
V
GE
= 8V
Common Emitter
T
C
= 25
°
C
C
C
Collector-Emitter Voltage, V
CE
[V]
0
2
Collector-Emitter Voltage, V
CE
[V]
4
6
8
0
6
12
18
24
30
Common Emitter
T
C
= 125
°
C
V
GE
= 8V
20V
15V
10V
C
C
1
10
0
2
4
6
8
10
C
C
Common Emitter
V
CE
= 20V
T
C
= 25
°
C
T
C
= 125
°
C
Gate-Emitter Voltage, V
GE
[V]
0.1
1
10
0
2
4
6
8
10
Collector-Emitter Voltage, V
CE
[V]
C
C
Common Emitter
V
GE
= 10V
T
C
= 25
°
C
T
C
= 125
°
C
0
30
60
90
120
150
0
1
2
3
I
C
= 6A
I
C
= 3A
I
C
= 1.5A
Common Emitter
V
GE
= 10V
C
C
Case Temperature, T
C
[
°
C]
1
10
0
100
200
300
400
500
600
Cres
Coes
Cies
Collector - Emitter Voltage, V
CE
[V]
C
Common Emitter
V
GE
= 0V, f = 1MHz
T
C
= 25
°
C
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