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參數資料
| 型號： | FGW15N40A |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | Strobe Flash N-Channel Logic Level IGBT |
| 中文描述： | 8 A, 400 V, N-CHANNEL IGBT |
| 封裝： | TSSOP-8 |
| 文件頁數： | 4/6頁 |
| 文件大小： | 112K |
| 代理商： | FGW15N40A |
FGW15N40A Rev. A2
www.fairchildsemi.com
F
4
Figure 7. Collector to Emitter On-State Voltage vs
Gate to Emitter Voltage
Figure 8. Collector to Emitter On-State Voltage vs
Gate to Emitter Voltage
Figure 9. Collector to Emitter On-State Voltage vs
Gate to Emitter Voltage
Figure 10. Collector to Emitter On-State Voltage
vs Gate to Emitter Voltage
Figure 11. Gate to Emitter Threshold Voltage vs
Case Temperature
Figure 12. Capacitance vs Collector to Emitter
Voltage
Typical Characteristics
(Continued)
0.5
1
1.5
2
2.5
3
3.5
4
V
C
,
V
GE
, GATE TO EMITTER VOLTAGE (V)
2
3
4
5
6
7
DUTY CYCLE < 0.5%
PULSE DURATION = 250μs
T
J
= -40
C
I
CE
= 150A
I
CE
= 120A
I
CE
= 90A
I
CE
= 60A
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
V
C
,
V
GE
, GATE TO EMITTER VOLTAGE (V)
I
CE
= 150A
I
CE
= 120A
I
CE
= 90A
I
CE
= 60A
DUTY CYCLE < 0.5%
PULSE DURATION = 250μs
T
J
= 25
C
2
3
4
5
6
7
0
1
2
3
4
5
6
V
C
,
V
GE
, GATE TO EMITTER VOLTAGE (V)
2
3
4
5
6
7
8
9
I
CE
= 150A
I
CE
= 120A
I
CE
= 90A
I
CE
= 60A
DUTY CYCLE < 0.5%
PULSE DURATION = 250μs
T
J
= 70
C
0
1
2
3
4
5
6
7
V
C
,
V
GE
, GATE TO EMITTER VOLTAGE (V)
DUTY CYCLE < 0.5%
PULSE DURATION = 250μs
T
J
= 125
o
C
I
CE
= 150A
I
CE
= 120A
I
CE
= 90A
I
CE
= 60A
2
3
4
5
6
7
8
9
V
G
,
T
C
, CASE TEMPERATURE (°C)
0.4
0.55
0.6
0.65
0.7
0.75
-40
-20
0
20
40
60
80
100
120
140
I
CE
= 1mA
V
CE
= V
GE
0.5
0.45
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
C
4
10
100
1000
5000
0.1
1
10
100
FREQUENCY = 1MHz
C
RES
C
OES
C
IES
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