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參數資料
| 型號： | FH101 |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | High Dynamic Range FET |
| 中文描述： | 高動態范圍場效應管 |
| 文件頁數： | 1/4頁 |
| 文件大小： | 177K |
| 代理商： | FH101 |
WJ Communications, Inc.
Phone: 1-800-WJ1-4401 FAX: 408-577-6620 e-mail: sales@wj.com Web site: www.wj.com
April 2004
FH101
High Dynamic Range FET
Product Description
The FH101 is a high dynamic range FET packaged
in a low cost surface mount package. The device is
available in both the standard SOT-89 package
and the environmentally friendly lead-free and
“green” SOT-89 package. The combination of low
noise figure and high output IP3 at the same bias
point makes it ideal for receiver and transmitter
applications. The FH101 achieves +36 dBm OIP3
at a mounting temperature of 85°C with an associ-
ated MTBF of >100 years. The package is a SOT-
89. All devices are 100% RF and DC tested.
The product is targeted for applications where high
linearity is required.
Product Features
50-3000 MHz Bandwidth
+
36 dBm Output IP3
1.2 dB Noise Figure
18 dB Gain
+
18 dBm P1dB
Single or Dual Supply Operation
MTBF >100 Years
SOT-89 SMT Package
Functional Diagram
4
1
2
3
Function
Gate
Source
Drain
Source
Pin No.
1
2
3
4
Product Information
Ordering Information
Part No.
FH101
FH101-G
Description
High Dynamic Range FET (leaded)
1
High Dynamic Range FET (lead-free)
2
1Product may contain lead-bearing materials. Maximum +235°C reflow temperature.
2Product does not contain lead-bearing materials. Maximum +260°C reflow temperature. Also
compatible with leaded soldering process.
The Communications Edge
Absolute Maximum Ratings
Parameter
Drain to Source Voltage
Gate to Source Voltage
Gate Current
Operating Case Temperature
Storage Temperature
Input RF Power (continuous)
Rating
+6.0 V
-6.0 V
4.5 mA
-40 to +85°C
-55 to +125°C
+10 dBm
Operation of this device above any of these parameters may cause permanent damage.
Specifications
DC Electrical Parameter Units
Saturated Drain Current, Idss mA
Transconductance, Gm
Pinch Off Voltage, Vp
Min.
100
Typical
140
120
-1.5
Max.
170
mS
V
-3.0
RF Parameter
Small Signal Gain, Gss
Max Stable Gain, Gmsg
Output IP3
Output P1dB
Noise Figure, NF
7
Units
dB
dB
dBm
dBm
dB
Min.
17
Typical
18
23
36
18
1.2
Max.
32
Notes:
1. DC and RF parameters measured under the following conditions unless otherwise noted.
25°C with Vds = 5.0 V, Vgs = 0 V, test frequency = 800 MHz, 50 W system.
2. OIP3 measured with two tones at an output power of 5 dBm/tone separated by 10 MHz. The
suppression on the largest IM3 product is used to calculate the OIP3 using a 2:1 slope rule.
3. Device needs appropriate match to become unconditionally stable.
4. Degradation of OIP3 occurs at low temperatures. Minimum typical OIP3 at -40°C is +36 dBm.
5. Idss is measured with Vgs = 0 V.
6. Pinch off voltage is measured when Ids = 0.6 mA.
7. Measured with Vds = 3.3 V, 50% Idss.
Typical Parameters
Parameter
Frequency
S21
S11
S22
Output IP3
Output P1dB
Noise Figure
Units
MHz
dB
dB
dB
dBm
dBm
dB
Typical
900
19.0
-10.7
-9.7
+38.0
+18.8
2.7
1900
16.0
-12.3
-17.2
+33.6
+19.1
3.1
Drain Bias Supply
Gate Bias
5 V @ 140 mA
0 V
Typical parameters reflect performance in an application circuit.
Actual Size
Specifications and information are subject to change without notice.
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| FH101_07 | 制造商:WJCI 制造商全稱:WJCI 功能描述:High Dynamic Range FET |
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