欧美成人免费电影,国产欧美一区二区三区精品酒店,精品国产a毛片,色网在线免费观看

參數資料
型號: FHX04LG
廠商: FUJITSU LTD
元件分類: 小信號晶體管
英文描述: Super Low Noise HEMT
中文描述: KU BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET
封裝: HERMETIC SEALED, METAL CERAMIC, CASE LG, 4 PIN
文件頁數: 1/5頁
文件大?。?/td> 123K
代理商: FHX04LG
Item
Saturated Drain Current
Transconductance
Pinch-off Voltage
Gate Source Breakdown Voltage
Noise Figure
Associated Gain
Noise Figure
Associated Gain
Noise Figure
Associated Gain
Thermal Resistance
Symbol
IDSS
gm
Vp
VGSO
NF
Gas
NF
Gas
NF
Gas
Rth
15
35
-0.2
-3.0
-
9.5
-
9.5
-
9.5
-
30
45
-0.7
-
0.75
10.5
0.9
10.5
1.1
10.5
300
60
-
-1.5
-
0.85
-
1.1
-
1.35
-
400
VDS = 2V, VGS = 0V
VDS = 2V, IDS =10mA
VDS = 2V, IDS =1mA
IGS = -10
μ
A
VDS = 2V,
IDS = 10mA,
f = 12GHz
mA
mS
V
V
dB
dB
dB
FHX04LG
FHX05LG
FHX06LG
dB
dB
dB
Condition
Unit
Limit
Typ.
Max.
Min.
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25
°
C)
Note:
RF parameters are measured on a sample basis as follows:
Lot qty.
1200
or
less
1201
to
3200
3201
to
10000
10001 or
over
Sample qty.
125
200
315
500
Accept/Reject
(0,1)
(0,1)
(1,2)
(1,2)
AVAILABLE CASE STYLES:
LG
Channel to Case
°
C/W
1
Edition 1.1
July 1999
Item
Symbol
Unit
Drain-Source Voltage
Gate-Source Voltage
Total Power Dissipation
Storage Temperature
Channel Temperature
VDS
VGS
Pt*
Tstg
Tch
V
V
3.5
-3.0
180
mW
°
C
°
C
-65 to +175
175
Rating
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25
°
C)
*Note:
Mounted on Al2O3 board (30 x 30 x 0.65mm)
Fujitsu recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDS) should not exceed 2 volts.
2. The forward and reverse gate currents should not exceed 0.2 and -0.05 mA respectively with
gate resistance of 4000
.
3. The operating channel temperature (Tch) should not exceed 80
°
C.
FEATURES
Low Noise Figure: 0.75dB (Typ.)@f=12GHz (FHX04)
High Associated Gain: 10.5dB (Typ.)@f=12GHz
Lg
0.25μm, Wg = 200μm
Gold Gate Metallization for High Reliability
Cost Effective Ceramic Microstrip (SMT) Package
Tape and Reel Packaging Available
FHX04LG, 05LG, 06LG
Super Low Noise HEMT
DESCRIPTION
The FHX04LG, FHX05LG, FHX06LG is a High Electron Mobility Transistor(HEMT)
intended for general purpose, low noise and high gain amplifiers in the 2-18GHz
frequency range.The devices are packaged in cost effective, low parasitic, hermetically
sealed metal-ceramic package for high volume telecommunication, TVRO, VSAT or other
low noise applications.
Fujitsu’s stringent Quality Assurance Program assures the highest
reliability and consistent performance.
相關PDF資料
PDF描述
FHX05LG Super Low Noise HEMT
FHX06LG Super Low Noise HEMT
FHX35LG Low Noise HEMT
FHX35X 12 AMP MINIATURE POWER RELAY
FIC03272 Microprocessor for handling signals from the TGS4161 carbon dioxide sensor
相關代理商/技術參數
參數描述
FHX04X 制造商:EUDYNA 制造商全稱:Eudyna Devices Inc 功能描述:GaAs FET & HEMT Chips
FHX05LG 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:Super Low Noise HEMT
FHX05X 制造商:EUDYNA 制造商全稱:Eudyna Devices Inc 功能描述:GaAs FET & HEMT Chips
FHX06LG 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:Super Low Noise HEMT
FHX06X 制造商:EUDYNA 制造商全稱:Eudyna Devices Inc 功能描述:GaAs FET & HEMT Chips
主站蜘蛛池模板: 故城县| 张掖市| 桑日县| 蚌埠市| 丹巴县| 左贡县| 安多县| 呼伦贝尔市| 滦南县| 丰原市| 昌宁县| 牙克石市| 崇义县| 图木舒克市| 庄河市| 雷波县| 申扎县| 林西县| 嵩明县| 孟津县| 阳东县| 依兰县| 礼泉县| 萍乡市| 临漳县| 亚东县| 辽中县| 门头沟区| 遂昌县| 晋城| 金川县| 成武县| 太仆寺旗| 潼关县| SHOW| 华坪县| 吉安县| 东台市| 民和| 伊金霍洛旗| 华容县|