- 您現在的位置：買賣IC網 > PDF目錄375799 > FJAF6916 (FAIRCHILD SEMICONDUCTOR CORP) Circular Connector; MIL SPEC:MIL-C-5015; Body Material:Metal; Series:GT; No. of Contacts:3; Connector Shell Size:16S; Connecting Termination:Solder; Circular Shell Style:Box Mount Receptacle; Body Style:Straight PDF資料下載
參數資料
| 型號： | FJAF6916 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | Circular Connector; MIL SPEC:MIL-C-5015; Body Material:Metal; Series:GT; No. of Contacts:3; Connector Shell Size:16S; Connecting Termination:Solder; Circular Shell Style:Box Mount Receptacle; Body Style:Straight |
| 中文描述： | 16 A, 800 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | TO-3PF, 3 PIN |
| 文件頁數： | 1/5頁 |
| 文件大小： | 112K |
| 代理商： | FJAF6916 |
2001 Fairchild Semiconductor Corporation
Rev. B, August 2001
F
NPN Triple Diffused Planar Silicon Transistor
Absolute Maximum Ratings
T
C
=25
°
C unless otherwise noted
Symbol
V
CBO
Collector-Base Voltage
V
CEO
Collector-Emitter Voltage
V
EBO
Emitter-Base Voltage
I
C
Collector Current (DC)
I
CP
*
Collector Current (Pulse)
P
C
Collector Dissipation
T
J
Junction Temperature
T
STG
Storage Temperature
* Pulse Test: PW=300
μ
s, duty Cycle=2% Pulsed
Electrical Characteristics
T
C
=25
°
C
unless otherwise noted
Symbol
Parameter
I
CES
Collector Cut-off Current
I
CBO
Collector Cut-off Current
I
EBO
Emitter Cut-off Current
BV
CBO
Collector-Base Breakdown Voltage
BV
CEO
Collector-Emitter Breakdown Voltage
BV
EBO
Emitter-Base Breakdown Voltage
h
FE1
h
FE2
V
CE
(sat)
Collector-Emitter Saturation Voltage
V
BE
(sat)
Base-Emitter Saturation Voltage
t
STG
*
Storage Time
t
F
*
Fall Time
* Pulse Test: PW=20
μ
s, duty Cycle=1% Pulsed
Thermal Characteristics
T
C
=25
°
C
unless otherwise noted
Symbol
R
θ
jC
Thermal Resistance, Junction to Case
Parameter
Rating
1700
800
6
16
30
60
150
-55 ~ 150
Units
V
V
V
A
A
W
°
C
°
C
Test Conditions
V
CB
=1400V, R
BE
=0
V
CB
=800V, I
E
=0
V
EB
=4V, I
C
=0
I
C
=500
μ
A, I
E
=0
I
C
=5mA, I
B
=0
I
E
=500
μ
A, I
C
=0
V
CE
=5V, I
C
=1A
V
CE
=5V, I
C
=8.5A
I
C
=10A, I
B
=2.5A
I
C
=10A, I
B
=2.5A
V
CC
=200V, I
C
=8A, R
L
=25
I
B1
=1.6A, I
B2
=-3.2A
Min
Typ
Max
1
10
1
Units
mA
μ
A
mA
V
V
V
1700
800
6
10
6
DC Current Gain
9
3
V
V
μ
s
μ
s
1.5
4
0.3
Parameter
Typ
Max
2.08
Units
°
C/W
High Voltage Color Display Horizontal
Deflection Output
High Collector-Base Breakdown Voltage : BV
CBO
= 1700V
Low Saturation Voltage : V
CE
(sat) = 3V (Max.)
For Color Monitor
FJAF6916
TO-3PF
1
1.Base 2.Collector 3.Emitter
相關PDF資料 |
PDF描述 |
|---|---|
| FJAF6920 | High Voltage Color Display Horizontal Deflection Output |
| FJB102 | High Voltage Power Darlington Transistor |
| FJC1308 | PNP Epitaxial Silicon Transistor |
| FJC1386 | PNP Epitaxial Silicon Transistor |
| FJC1386P | TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 5A I(C) | SOT-89 |
相關代理商/技術參數 |
參數描述 |
|---|---|
| FJAF6916TU | 功能描述:兩極晶體管 - BJT NPN Si Transistor Tripple Diff Planar RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| FJAF6920 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:High Voltage Color Display Horizontal Deflection Output |
| FJAF6920ATU | 功能描述:兩極晶體管 - BJT NPN Triple Diffused Planar Silicon RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| FJAF6920TU | 功能描述:兩極晶體管 - BJT NPN Si Transistor Tripple Diff Planar RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| FJAFS1510A | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:ESBCa?￠ Rated NPN Power Transistor |
發布緊急采購，3分鐘左右您將得到回復。