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參數資料
| 型號： | FJL6920YDTU |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | NPN Triple Diffused Planar Silicon Transistor |
| 中文描述： | 20 A, 800 V, NPN, Si, POWER TRANSISTOR, TO-264AA |
| 封裝： | TO-264, 3 PIN |
| 文件頁數： | 1/5頁 |
| 文件大小： | 84K |
| 代理商： | FJL6920YDTU |
2001 Fairchild Semiconductor Corporation
Rev. A, May 2001
F
1
NPN Triple Diffused Planar Silicon Transistor
Absolute Maximum Ratings
T
C
=25
°
C unless otherwise noted
Symbol
V
CBO
Collector-Base Voltage
V
CEO
Collector-Emitter Voltage
V
EBO
Emitter-Base Voltage
I
C
Collector Current (DC)
I
CP
*
Collector Current (Pulse)
P
C
Collector Dissipation
T
J
Junction Temperature
T
STG
Storage Temperature
* Pulse Test: PW=300
μ
s, duty Cycle=2% Pulsed
Electrical Characteristics
T
C
=25
°
C
unless otherwise noted
Symbol
Parameter
I
CES
Collector Cut-off Current
I
CBO
Collector Cut-off Current
I
EBO
Emitter Cut-off Current
BV
CBO
Collector-Base Breakdown Voltage
BV
CEO
Collector-Emitter Breakdown Voltage
BV
EBO
Emitter-Base Breakdown Voltage
h
FE1
h
FE2
V
CE
(sat)
Collector-Emitter Saturation Voltage
V
BE
(sat)
Base-Emitter Saturation Voltage
t
STG
*
Storage Time
t
F
*
Fall Time
* Pulse Test: PW=20
μ
s, duty Cycle=1% Pulsed
Thermal Characteristics
T
C
=25
°
C unless otherwise noted
Symbol
R
θ
jC
Thermal Resistance, Junction to Case
Parameter
Rating
1700
800
6
20
30
200
150
-55 ~ 150
Units
V
V
V
A
A
W
°
C
°
C
Test Conditions
V
CB
=1400V, R
BE
=0
V
CB
=800V, I
E
=0
V
EB
=4V, I
C
=0
I
C
=500
μ
A, I
E
=0
I
C
=5mA, I
B
=0
I
E
=500
μ
A, I
C
=0
V
CE
=5V, I
C
=1A
V
CE
=5V, I
C
=11A
I
C
=11A, I
B
=2.75A
I
C
=11A, I
B
=2.75A
V
CC
=200V, I
C
=10A, R
L
=20
I
B1
=2.0A, I
B2
= - 4.0A
Min.
Typ.
Max.
1
10
1
Units
mA
μ
A
mA
V
V
V
1700
800
6
8
5.5
DC Current Gain
8.5
3
1.5
3
0.2
V
V
μ
s
μ
s
0.15
Parameter
Typ
Max
0.625
Units
°
C/W
FJL6920
High Voltage Color Display Horizontal
Deflection Output
High Collector-Base Breakdown Voltage : BV
CBO
= 1700V
Low Saturation Voltage : V
CE
(sat) = 3V (Max.)
For Color Monitor
TO-264
1.Base 2.Collector 3.Emitter
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