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參數(shù)資料
| 型號(hào)： | FJL6920YDTU |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | NPN Triple Diffused Planar Silicon Transistor |
| 中文描述： | 20 A, 800 V, NPN, Si, POWER TRANSISTOR, TO-264AA |
| 封裝： | TO-264, 3 PIN |
| 文件頁數(shù)： | 2/5頁 |
| 文件大小： | 84K |
| 代理商： | FJL6920YDTU |
2001 Fairchild Semiconductor Corporation
Rev. A, May 2001
F
Typical Characteristics
Figure 1. Static Characteristics
Figure 2. DC Current Gain
Figure 3. Collector-Emitter Saturation Voltage
Figure 4. Collector-Emitter Saturation Voltage
Figure 5. Base-Emitter On Voltage
Figure 6. Resistive Load Switching Time
0
2
4
6
8
10
0
2
4
6
8
10
12
14
16
I
B
=4.0A
I
B
=2.0A
I
B
=1.5A
I
B
=1.0A
I
B
=0.5A
I
B
=0.2A
I
C
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
0.1
1
10
100
1
10
100
V
CE
= 5V
Ta = 125
o
C
Ta = 25
o
C
Ta = - 25
o
C
h
F
,
I
C
[A], COLLECTOR CURRENT
0.1
1
10
100
0.01
0.1
1
10
I
C
= 3 I
B
Ta = 125
o
C
Ta = 25
o
C
Ta = - 25
o
C
V
C
(
I
C
[A], COLLECTOR CURRENT
0.1
1
10
100
0.01
0.1
1
10
I
C
= 5 I
B
Ta = 125
o
C
Ta = 25
o
C
Ta = - 25
o
C
V
C
(
I
C
[A], COLLECTOR CURRENT
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0
2
4
6
8
10
12
14
16
V
CE
= 5V
- 25
o
C
25
o
C
125
o
C
I
C
V
BE
[V], BASE-EMITTER VOLTAGE
1
10
0.01
0.1
1
10
t
F
t
STG
V
CC
= 200V,
I
C
= 10A, I
B1
= 2A
t
S
F
μ
s
I
B2
[A], REVERSE BASE CURRENT
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