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參數(shù)資料
| 型號(hào)： | FJP13009 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類(lèi)： | 功率晶體管 |
| 英文描述： | DC Ammeter 20A 5-40V Pwr RoHS Compliant: Yes |
| 中文描述： | 12 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
| 封裝： | TO-220, 3 PIN |
| 文件頁(yè)數(shù)： | 1/5頁(yè) |
| 文件大小： | 48K |
| 代理商： | FJP13009 |
2003 Fairchild Semiconductor Corporation
Rev. A, May 2003
F
NPN Silicon Transistor
Absolute Maximum Ratings
T
C
=25
°
C
unless otherwise noted
Symbol
V
CBO
Collector-Base Voltage
V
CEO
Collector-Emitter Voltage
V
EBO
Emitter-Base Voltage
I
C
Collector Current (DC)
I
CP
Collector Current (Pulse)
I
B
Base Current
P
C
Collector Dissipation (T
C
=25
°
C)
T
J
Junction Temperature
T
STG
Storage Temperature
Electrical Characteristics
T
C
=25
°
C
unless otherwise noted
Symbol
Parameter
V
CEO
(sus)
Collector-Emitter Sustaining Voltage
I
EBO
Emitter Cut-off Current
h
FE
* DC Current Gain
V
CE
(sat)
* Collector-Emitter Saturation Voltage
* Pulse test: PW
≤
300
μ
s, Duty cycle
≤
2%
Parameter
Value
700
400
9
12
24
6
100
150
- 65 ~ 150
Units
V
V
V
A
A
A
W
°
C
°
C
Test Condition
I
C
= 10mA, I
B
= 0
V
EB
= 9V, I
C
= 0
V
CE
= 5V, I
C
= 5A
V
CE
= 5V, I
C
= 8A
I
C
= 5A, I
B
= 1A
I
C
= 8A, I
B
= 1.6A
I
C
= 12A, I
B
= 3A
I
C
= 5A, I
B
= 1A
I
C
= 8A, I
B
= 1.6A
V
CB
= 10V, f = 0.1MHz
V
CE
= 10V, I
C
= 0.5A
V
CC
= 125V, I
C
= 8A
I
B1
= - I
B2
= 1.6A
R
L
= 15,6
Min.
400
Typ.
Max.
Units
V
mA
1
8
6
40
30
1
1.5
3
1.2
1.6
V
V
V
V
V
pF
MHz
μ
s
μ
s
μ
s
V
BE
(sat)
* Base-Emitter Saturation Voltage
C
ob
f
T
t
ON
t
STG
t
F
Output Capacitance
Current Gain Bandwidth Product
Turn On Time
Storage Time
Fall Time
180
4
1.1
3
0.7
FJP13009
High Voltage Switch Mode Application
High Speed Switching
Suitable for Switching Regulator and Motor Control
1.Base 2.Collector 3.Emitter
1
TO-220
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FJP13009_07 | 制造商:FAIRCHILD 制造商全稱(chēng):Fairchild Semiconductor 功能描述:High Voltage Fast-Switching NPN Power Transistor |
| FJP13009H2 | 功能描述:兩極晶體管 - BJT 700V/400V/12A/NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| FJP13009H2TU | 功能描述:兩極晶體管 - BJT NPN Sil Transistor RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| FJP13009H2TU | 制造商:Fairchild Semiconductor Corporation 功能描述:; Leaded Process Compatible:Yes |
| FJP13009H2TU_F138 | 功能描述:兩極晶體管 - BJT TO220 HI VOLTAGE SWITCH MODE APP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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