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參數資料
| 型號： | FJP13009TU |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | High Voltage Fast-Switching NPN Power Transistor |
| 中文描述： | 12 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
| 封裝： | TO-220, 3 PIN |
| 文件頁數： | 1/6頁 |
| 文件大小： | 99K |
| 代理商： | FJP13009TU |
2007 Fairchild Semiconductor Corporation
FJP13009 Rev. B
1
www.fairchildsemi.com
F
March 2007
FJP13009
High Voltage Fast-Switching NPN Power Transistor
High Voltage Capability
High Switching Speed
Suitable for Electronic Ballast and Switching Mode Power Supply
Absolute Maximum Ratings*
T
C
= 25°C unless otherwise noted
(notes_1)
Symbol
Parameter
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES_1:
1) These ratings are based on a maximum junction temperature of 150
°
C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Package Marking and Ordering Information
Notes_2 :
1) The Affix “-H2” means the hFE classification.
2) The Suffix “-TU” means the Tube packing method, which can be on fairchildsemi website at http://www.fairchildsemi.com/packaging.
Value
Units
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
P
C
T
J
T
STG
Collector-Base Voltage
700
V
Collector-Emitter Voltage
400
V
Emitter-Base Voltage
9
V
Collector Current (DC)
12
A
Collector Current (Pulse)
24
A
Base Current
6
A
Collector Dissipation (T
C
= 25
°
C)
Junction Temperature
100
W
150
°
C
Storage Temperature Range
-65 ~ 150
°
C
Device Item
(notes_2)
Device Marking
Package
Packing Method
Qty(pcs)
FJP13009
J13009
TO-220
Bulk
1,200
FJP13009H2TU
J130092
TO-220
TUBE
1,000
FJP13009TU
J13009
TO-220
TUBE
1,000
1.Base 2.Collector 3.Emitter
1
TO-220
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| FJP1943OTU | 功能描述:兩極晶體管 - BJT PNP -250V -17A 80W RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| FJP1943RTU | 功能描述:兩極晶體管 - BJT PNP -250V -17A 80W Silicon RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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