- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄375802 > FJPF5555 (FAIRCHILD SEMICONDUCTOR CORP) High Voltage Switch Mode Application PDF資料下載
參數(shù)資料
| 型號： | FJPF5555 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | High Voltage Switch Mode Application |
| 中文描述： | 5 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
| 封裝： | TO-220F, 3 PIN |
| 文件頁數(shù)： | 1/5頁 |
| 文件大小： | 71K |
| 代理商： | FJPF5555 |
2004 Fairchild Semiconductor Corporation
Rev. A, June 2004
F
NPN Silicon Transistor
Absolute Maximum Ratings
T
C
=25
°
C unless otherwise noted
Symbol
V
CBO
Collector-Base Voltage
V
CEO
Collector-Emitter Voltage
V
EBO
Emitter-Base Voltage
I
C
Collector Current (DC)
I
CP
Collector Current (Pulse)
P
C
Collector Dissipation
T
J
Junction Temperature
T
STG
Storage Temperature
Electrical Characteristics
T
C
=25
°
C
unless otherwise noted
Symbol
Parameter
BV
CBO
Collector-Base Breakdown Voltage
BV
CEO
Collector-Emitter Breakdown Voltage
BV
EBO
Emitter-Base Breakdown Voltage
h
FE
* Pulse test: PW
≤
300
μ
s, Duty Cycle
≤
2%
Parameter
Value
1050
400
14
5
10
40
150
- 55 ~ 150
Units
V
V
V
A
A
W
°
C
°
C
Test Condition
I
C
=500
μ
A, I
E
=0
I
C
=5mA, I
B
=
0
I
E
=500
μ
A, I
C
=0
V
CE
=5V, I
C
=10mA
V
CE
=3V, I
C
=0.8A
I
C
=1A, I
B
=0.2A
I
C
=3.5A, I
B
=1.0A
I
C
=3.5A, I
B
=1.0A
V
CB
=10V, f=1MHz
V
CC
=125V, I
C
=0.5A
I
B1
=45mA, I
B2
=0.5A
R
L
=250
Min.
1050
400
14
10
20
Typ.
Max.
Units
V
V
V
*
DC Current Gain
40
0.5
1.5
1.2
V
CE
(sat)
Collector-Emitter Saturation Voltage
V
V
V
pF
μ
s
μ
s
μ
s
μ
s
μ
s
μ
s
V
BE
(sat)
C
ob
t
ON
t
STG
t
F
t
ON
t
STG
t
F
Base-Emitter Saturation Voltage
Output Capacitance
Turn On Time
Storage Time
Fall Time
Turn On Time
Storage Time
Fall Time
45
1.0
1.2
0.3
2.0
2.5
0.3
V
CC
=250V, I
C
=2.5A
I
B1
=0.5A, I
B2
=1.0A
R
L
=100
FJPF5555
High Voltage Switch Mode Application
Fast Speed Switching
Wide Safe Operating Area
Suitable for Electronic Ballast Application
1.Base 2.Collector 3.Emitter
1
TO-220F
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| FJPF6806D | NPN Triple Diffused Planar Silicon Transistor |
| FJPF9020 | PNP Epitaxial Darlington Transistor |
| FJT1100 | Ultra Low Leakage Diodes |
| FJT1101 | Ultra Low Leakage Diodes |
| FJT44 | NPN Epitaxial Silicon Transistor |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FJPF5555TU | 功能描述:兩極晶體管 - BJT NPN 1100V/5A RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| FJPF6806D | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:NPN Triple Diffused Planar Silicon Transistor |
| FJPF6806DTU | 功能描述:開關(guān)晶體管 - 偏壓電阻器 NPN Si Transistor Tripple Diff Planar RoHS:否 制造商:ON Semiconductor 配置: 晶體管極性:NPN/PNP 典型輸入電阻器: 典型電阻器比率: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 直流集電極/Base Gain hfe Min:200 mA 最大工作頻率: 集電極—發(fā)射極最大電壓 VCEO:50 V 集電極連續(xù)電流:150 mA 峰值直流集電極電流: 功率耗散:200 mW 最大工作溫度: 封裝:Reel |
| FJPF9020 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:PNP Epitaxial Darlington Transistor |
| FJPF9020TTU | 功能描述:達(dá)林頓晶體管 NPN Transistor Epitaxial Darlington RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。