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參數資料
| 型號： | FJV42 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | NPN High Voltage Transistor |
| 中文描述： | 500 mA, 350 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | SOT-23, 3 PIN |
| 文件頁數： | 1/4頁 |
| 文件大小： | 81K |
| 代理商： | FJV42 |
2007 Fairchild Semiconductor Corporation
FJV42 Rev. A
1
www.fairchildsemi.com
F
March 2007
FJV42
NPN
High Voltage Transistor
Absolute Maximum Ratings *
T
a
= 25°C unless otherwise noted
* These ratings are limiting values above which the serviceability of any semiconductor device may by impaired.
Thermal Characteristics
Electrical Characteristics
T
C
= 25°C unless otherwise noted
* Pulse Test: PW
≤
300
μ
s, Duty Cycle
≤
2%
Symbol
Parameter
Value
Units
V
CBO
V
CEO
V
EBO
Collector-Base Voltage
350
V
Collector-Emitter Voltage
350
V
Emitter-Base Voltage
6
V
I
C
T
STG
P
C
Collector Current
500
mA
Storage Temperature Range
-55~150
°
C
Collector Power Dissipation
350
mW
Symbol
Parameter
Value
Units
R
TH
(j-a)
Thermal Resistance, Junction to Ambiet
357
°
C/W
Symbol
Parameter
Test Condition
MIN
MAX
Units
V
(BR)CEO
Collector-Emitter Breakdown Voltage
*
I
C
= 5.0 mA, I
B
= 0
350
V
V
(BR)CBO
Collector-Base Breakdown Voltage
I
C
= 100 uA, I
E
= 0
350
V
V
(BR)EBO
Emitter-Base Breakdown Voltage
I
E
= 100 uA, I
C
= 0
6
V
I
CBO
Collector-Cutoff Current
V
CB
= 200 V, I
E
= 0
0.1
uA
I
EBO
Emitter-Cutoff Current
DC Current Gain
*
V
EB
= 5.0 V, I
C
= 0
0.1
uA
h
FE
I
C
= 1.0 mA, V
CE
= 10 V
I
C
= 10 mA, V
CE
= 10 V
I
C
= 30 mA, V
CE
= 10 V
25
40
40
V
CE(
sat
)
Collector-Emitter Saturation Voltage
*
Base-Emitter Breakdown Voltage
*
I
C
= 20 mA, I
B
= 2.0 mA
0.5
V
V
BE(
sat
)
I
C
= 20 mA, I
B
= 2.0 mA
0.9
V
f
T
Current Gain - Bandwidth Product
I
C
= 10 mA, V
CE
= 20V, f =100 MHz
50
MHz
C
cb
Output
Capacitance
V
CB
= 20 V, I
E
= 0, f = 1.0 MHz
3
pF
1. Base 2. Emitter 3. Collector
SOT-23
Marking: 1DF
1
2
3
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| FJV42MTF | 功能描述:兩極晶體管 - BJT NPN High Voltage Transistor RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| FJV92MTF | 制造商:Fairchild Semiconductor Corporation 功能描述: |
| FJV992 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Audio Frequency Low Noise Amplifier |
| FJV992EMTF | 功能描述:兩極晶體管 - BJT PNP/120V/50mA RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| FJV992FMTF | 功能描述:兩極晶體管 - BJT PNP/120V/50mA RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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