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參數資料
| 型號： | FJX3904TF |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | NPN Epitaxial Silicon Transistor |
| 中文描述： | 200 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | SOT-323, 3 PIN |
| 文件頁數： | 1/4頁 |
| 文件大小： | 110K |
| 代理商： | FJX3904TF |
2007 Fairchild Semiconductor Corporation
FJX3904 Rev. B
1
www.fairchildsemi.com
F
January 2007
FJX3904
NPN Epitaxial Silicon Transistor
General Purpose Transistor
Absolute Maximum Ratings*
T
a
=25
°
C
unless otherwise noted
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150
°
C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics*
T
a
= 25°C unless otherwise noted
Symbol
Parameter
* Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2.0%
Symbol
Parameter
Value
Units
V
CBO
V
CES
V
EBO
I
C
P
C
T
STG
Collector-Base Voltage
60
V
Collector-Emitter Voltage
40
V
Emitter-Base Voltage
6
V
Collector Current
200
mA
Collector Power Dissipation
350
mW
Storage Temperature
-55 ~ 150
°
C
Test Conditions
Min.
Max.
Units
BV
CBO
BV
CEO
BV
EBO
I
CEX
h
FE
Collector-Base Breakdown Voltage
I
C
=10
μ
A, I
E
=0
I
C
=1mA, I
B
=0
I
E
=10
μ
A, I
C
=0
V
CE
=30V, V
EB
=3V
V
CE
=1V, I
C
=0.1mA
V
CE
=1V, I
C
=1mA
V
CE
=1V, I
C
=10mA
V
CE
=1V, I
C
=50mA
V
CE
=1V, I
C
=100mA
I
C
=10mA, I
B
=1mA
I
C
=50mA, I
B
=5mA
I
C
=10mA, I
B
=1mA
I
C
=50mA, I
B
=5mA
V
CB
=5V, I
E
=0, f=1MHz
V
CE
=20V, I
C
=10mA
I
C
=100
μ
A, V
CE
=5V, R
S
=1K
f=10Hz to 15.7KHz
60
V
* Collector-Emitter Breakdown Voltage
40
V
Emitter-Base Breakdown Voltage
6
V
Collector Cut-off Current
50
nA
* DC Current Gain
40
70
100
60
30
300
V
CE
(sat)
* Collector-Emitter Saturation Voltage
0.2
0.3
V
V
V
BE
(sat)
* Base-Emitter Saturation Voltage
0.65
0.85
0.95
V
V
C
ob
f
T
NF
Output Capacitance
4
pF
Current Gain Bandwidth Product
300
MHz
Noise Figure
5
dB
t
ON
Turn On Time
V
CC
=3V, V
BE
=0.5V
I
C
=10mA, I
B1
=1mA
V
CC
=3V, I
C
=10mA
I
B1
=I
B2
=1mA
70
ns
t
OFF
Turn Off Time
250
ns
1. Base 2. Emitter 3. Collector
1
2
SOT-323
3
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相關代理商/技術參數 |
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|---|---|
| FJX3906 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:General Purpose Transistor |
| FJX3906TF | 功能描述:兩極晶體管 - BJT PNP/40V/0.2A RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| FJX3906TF_Q | 功能描述:兩極晶體管 - BJT PNP/40V/0.2A RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| FJX4001R | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Switching Application |
| FJX4001RTF | 功能描述:開關晶體管 - 偏壓電阻器 PNP Si Transistor Epitaxial RoHS:否 制造商:ON Semiconductor 配置: 晶體管極性:NPN/PNP 典型輸入電阻器: 典型電阻器比率: 安裝風格:SMD/SMT 封裝 / 箱體: 直流集電極/Base Gain hfe Min:200 mA 最大工作頻率: 集電極—發射極最大電壓 VCEO:50 V 集電極連續電流:150 mA 峰值直流集電極電流: 功率耗散:200 mW 最大工作溫度: 封裝:Reel |
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