欧美成人免费电影,国产欧美一区二区三区精品酒店,精品国产a毛片,色网在线免费观看

參數(shù)資料
型號(hào): FLL120MK
廠商: SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC.
英文描述: L-Band Medium & High Power GaAs FET
中文描述: L波段中等
文件頁(yè)數(shù): 1/4頁(yè)
文件大小: 96K
代理商: FLL120MK
1
Edition 1.1
July 1999
FLL120MK
L-Band Medium & High Power GaAs FET
Item
Drain-Source Voltage
Gate-Source Voltage
Total Power Dissipation
Storage Temperature
Channel Temperature
Symbol
VDS
VGS
15
-5
37.5
-65 to +175
175
Tc = 25
°
C
V
V
W
°
C
°
C
PT
Tstg
Tch
Condition
Unit
Rating
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25
°
C)
Fujitsu recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDS) should not exceed 10 volts.
2. The forward and reverse gate currents should not exceed 26.8 and -5.8 mA respectively with
gate resistance of 50
.
3.The operating channel temperature (Tch) should not exceed 145
°
C.
Item
Saturated Drain Current
Transconductance
Pinch-off Voltage
Gate Source Breakdown Voltage
Power-added Efficiency
Output Power at 1dB G.C.P.
Power Gain at 1dB G.C.P.
Symbol
IDSS
gm
-
4000
6000
-
2000
-
-1.0
-2.0
-3.5
-5
-
-
9.0
10.0
-
-
40
-
39.5
40.0
-
VDS = 5V, IDS =240mA
VDS = 5V, IDS = 2400mA
VDS = 5V, VGS = 0V
IGS = -240
μ
A
Channel to Case
VDS = 10V
IDS
=
0.55 IDSS (Typ.),
f = 2.3GHz
mA
mS
V
dB
%
dBm
V
Vp
VGSO
P1dB
G1dB
η
add
Thermal Resistance
-
3.3
4.0
°
C/W
Rth
Test Conditions
Unit
Limit
Typ.
Max.
Min.
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25
°
C)
G.C.P.: Gain Compression Point
CASE STYLE:
MK
FEATURES
High Output Power: P1dB = 40.0dBm (Typ.)
High Gain: G1dB = 10.0dB (Typ.)
High PAE:
η
add = 40% (Typ.)
Proven Reliability
Hermetically Sealed Package
DESCRIPTION
The FLL120MK is a Power GaAs FET that is specifically designed to
provide high power at L-Band frequencies with gain, linearity and
efficiency superior to that of silicon devices. The performance in
multitone environments for Class AB operation make them ideally
suited for base station applications.
Fujitsu’s stringent Quality Assurance Program assures the highest
reliability and consistent performance.
相關(guān)PDF資料
PDF描述
FLL200IB-1 L-Band Medium & High Power GaAs FET
FLL200IB-2 L-Band Medium & High Power GaAs FET
FLL200IB-3 L-Band Medium & High Power GaAs FET
FLL21E004ME High Voltage - High Power GaAs FET
FLL21E010MK High Voltage - High Power GaAs FET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FLL1500IU-2C 制造商:未知廠家 制造商全稱:未知廠家 功能描述:L-Band High Power GaAs FET
FLL177 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:L-BAND MEDIUM & HIGH POWER GAAS FET
FLL177ME 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:L-BAND MEDIUM & HIGH POWER GAAS FET
FLL200IB-1 制造商:EUDYNA 制造商全稱:Eudyna Devices Inc 功能描述:L-Band Medium & High Power GaAs FET
FLL200IB-2 制造商:EUDYNA 制造商全稱:Eudyna Devices Inc 功能描述:L-Band Medium & High Power GaAs FET
主站蜘蛛池模板: 通州市| 仙桃市| 梁河县| 邓州市| 瓦房店市| 凤阳县| 饶阳县| 栾城县| 中阳县| 吉木乃县| 商洛市| 临沭县| 西乌珠穆沁旗| 栾城县| 衡阳市| 台中县| 慈利县| 平昌县| 桦川县| 修水县| 遵义市| 英吉沙县| 铁岭县| 吴江市| 伊金霍洛旗| 芒康县| 微博| 丰县| 侯马市| 敦化市| 长海县| 彩票| 九龙县| 昌吉市| 西和县| 綦江县| 钦州市| 建平县| 阆中市| 桐庐县| 上犹县|