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參數資料
| 型號： | FLL57MK |
| 廠商： | SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC. |
| 英文描述： | L-Band Medium & High Power GaAs FET |
| 中文描述： | L波段中等 |
| 文件頁數： | 3/4頁 |
| 文件大小： | 96K |
| 代理商： | FLL57MK |
3
FLL57MK
L-Band Medium & High Power GaAs FET
+j250
+j100
+j50
+j25
+j10
0
-j10
-j25
-j50
-j100
-j250
S11
S22
180
°
+90
°
0
°
-90
°
S21
S12
SCALE FOR |S21|
S
0.2
0.1
2
0.5 GHz
0.5 GHz
0.5 GHz
3
3
2.5
2
2
1.5
1
1
4
4
3.5
4.5
6
4
8
100
25
50
4
4
1
2
2
3
3
4.5
4.5
3.5
5.0 GHz
5.0 GHz
0.5 GHz
5.0 GHz
5.0 GHz
S-PARAMETERS
VDS= 10V, IDS= 800mA
S21
MAG
ANG
FREQUENCY
(MHZ)
S11
S12
S22
MAG
ANG
MAG
ANG
MAG
ANG
500
.929
-157.5
5.115
99.7
.017
21.7
.661
-175.9
1000
.927
-172.6
2.718
91.4
.018
24.6
.669
-176.5
1500
.914
179.9
1.988
88.3
.020
34.4
.660
-177.7
2000
.902
174.0
1.653
83.8
.022
41.1
.651
-178.8
2500
.887
167.6
1.558
79.4
.026
48.7
.621
179.8
3000
.856
157.0
1.534
72.3
.034
42.7
.584
177.7
3500
.806
140.9
1.782
60.2
.040
47.0
.527
174.3
4000
.725
114.8
1.888
39.3
.057
35.5
.465
169.3
4500
.609
71.9
2.199
15.8
.082
19.7
.396
162.0
5000
.548
-0.6
2.278
-24.0
.096
-11.8
.270
151.1
相關PDF資料 |
PDF描述 |
|---|---|
| FLL600IQ-2C | L-Band High Power GaAs FET |
| FLL600IQ-2 | Push-Pull Configuration, Broad Frequency Range: 800 to 2000 MHz, Suitable for class AB operation |
| FLL600IQ-3 | L-Band Medium & High Power GaAs FET |
| FLL810IQ-3C | L-Band High Power GaAs FET |
| FLL810IQ-4C | L-Band High Power GaAs FET |
相關代理商/技術參數 |
參數描述 |
|---|---|
| FLL600IQ-2 | 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:Push-Pull Configuration, Broad Frequency Range: 800 to 2000 MHz, Suitable for class AB operation |
| FLL600IQ-2C | 制造商:EUDYNA 制造商全稱:Eudyna Devices Inc 功能描述:L-Band High Power GaAs FET |
| FLL600IQ-3 | 制造商:SUMITOMO ELECTRIC Device Innovations Inc 功能描述:L-Band Power GaAs FET (48.0dBm@2.76GHz), Bulk |
| FLL800IQ-2C | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:L-Band High Power GaAs FET |
| FLL810IQ-3C | 制造商:FUJITSU 功能描述: |
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