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參數資料
| 型號： | FLL600IQ-2 |
| 廠商： | FUJITSU LTD |
| 元件分類： | 功率晶體管 |
| 英文描述： | Push-Pull Configuration, Broad Frequency Range: 800 to 2000 MHz, Suitable for class AB operation |
| 中文描述： | L BAND, GaAs, N-CHANNEL, RF POWER, JFET |
| 封裝： | CASE IQ, 5 PIN |
| 文件頁數： | 3/4頁 |
| 文件大小： | 100K |
| 代理商： | FLL600IQ-2 |
FLL600IQ-2
3
-60
-56
-52
-48
-44
-40
-36
-32
-28
30
28
26
32
34
36
38
40
42
44
Total Output Power (dBm)
VDS = 12V
IDS = 4.0A
f = 1.96GHz
f = 5.0MHz
2-tone test
I
OUTPUT POWER vs. IMD
IM5
IM3
S-PARAMETERS
VDS= 12V, IDS= 2A
FREQUENCY
(MHZ)
S11
S21
S12
S22
MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
1000
1100
1200
1300
1400
1500
1600
1700
1800
1900
2000
2100
2200
2300
2400
2500
2600
2700
2800
2900
3000
.952
.934
.911
.872
.797
.688
.560
.864
.672
.766
.822
.854
.867
.875
.868
.865
.842
.807
.732
.561
.486
169.0
166.3
163.3
159.4
155.4
153.0
159.1
173.4
177.9
174.9
170.1
163.9
157.6
150.2
141.0
132.9
117.4
93.4
50.7
-43.5
134.7
.808
.865
.958
1.098
1.287
1.516
1.661
1.612
1.398
1.185
1.021
.906
.832
.800
.792
.811
.867
.947
.997
.814
.450
32.9
24.6
14.8
3.0
-12.2
-32.7
-58.7
-86.1
-110.1
-128.8
-143.3
-155.7
-167.2
-178.0
170.4
160.1
145.8
126.5
101.3
59.2
100.9
.004
.006
.006
.006
.009
.011
.013
.014
.013
.012
.011
.011
.010
.012
.012
.012
.015
.020
.021
.021
.005
-15.0
-38.5
-33.2
-44.6
-73.9
-81.3
-111.7
-138.7
-164.6
174.4
162.0
149.4
134.5
119.7
111.9
103.1
89.8
65.6
30.1
-26.3
160.1
.893
.903
.905
.910
.918
.936
.947
.949
.929
.913
.902
.885
.871
.864
.846
.831
.812
.785
.770
.739
.712
178.0
177.9
177.9
177.5
177.0
176.2
174.7
172.1
170.0
168.9
168.5
167.7
166.7
166.5
165.5
162.8
162.0
160.9
160.5
158.7
158.4
Note: This S-Parameter data shows measurements performed on a single-ended push-pull FET. These parameters should be used
to determine the calculated Push-Pull S-Parameter amplifier designs.
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| FLL600IQ-3 | L-Band Medium & High Power GaAs FET |
| FLL810IQ-3C | L-Band High Power GaAs FET |
| FLL810IQ-4C | L-Band High Power GaAs FET |
| FLLD261 | HIGH CONDUCTANCE LOW LEAKAGE DIODE |
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相關代理商/技術參數 |
參數描述 |
|---|---|
| FLL600IQ-2C | 制造商:EUDYNA 制造商全稱:Eudyna Devices Inc 功能描述:L-Band High Power GaAs FET |
| FLL600IQ-3 | 制造商:SUMITOMO ELECTRIC Device Innovations Inc 功能描述:L-Band Power GaAs FET (48.0dBm@2.76GHz), Bulk |
| FLL800IQ-2C | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:L-Band High Power GaAs FET |
| FLL810IQ-3C | 制造商:FUJITSU 功能描述: |
| FLL810IQ-4C | 制造商:EUDYNA 制造商全稱:Eudyna Devices Inc 功能描述:L-Band High Power GaAs FET |
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