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參數(shù)資料
| 型號(hào)： | FLM5359-35F |
| 廠商： | SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC. |
| 英文描述： | C-Band Internally Matched FET |
| 中文描述： | C波段內(nèi)部匹配場(chǎng)效應(yīng)管 |
| 文件頁(yè)數(shù)： | 1/5頁(yè) |
| 文件大小： | 187K |
| 代理商： | FLM5359-35F |
C-Band Internally Matched FET
FEATURES
High Output Power: P1dB=45.5dBm(Typ.)
High Gain: G1dB=9.0dB(Typ.)
High PAE:
η
add=35%(Typ.)
Broad Band: 5.3~5.9GHz
Impedance Matched Zin/Zout = 50
Hermetically Sealed Package
ABSOLUTE MAXIMUM RATINGS (Case Temperature Tc=25
°
C)
Item
Drain-Source Voltage
ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25
°
C)
CASE STYLE: IK
Edition 1.3
September 2004
1
FLM5359-35F
Note : Based on EIAJ ED-4701 C-111A(C=100pF, R=1.5k
)
DESCRIPTION
The FLM5359-35F is a power GaAs FET that is internally matched
for standard communication bands to provide optimum power and
gain in a 50
system.
RECOMMENDED OPERATING CONDITION (Case Temperature Tc=25
°
C)
Item
Symbol
G.C.P.:Gain Compression Point, S.C.L.:Single Carrier Level
Symbol
V
DS
Rating
15
Unit
Gate-Source Voltage
Total Power Dissipation
Storage Temperature
V
GS
P
T
T
stg
-5
115.4
-65 to +175
V
V
W
o
C
Channel Temperature
T
ch
175
o
C
Condition
Unit
DC Input Voltage
Forward Gate Current
V
DS
I
GF
≤
10
≤
107.2
≥
-23.2
V
mA
Limit
R
G
=13
Reverse Gate Current
I
GR
R
G
=13
mA
ESD
Class
Ⅲ
2000V
~
Power Gain at 1dB G.C.P.
Limit
Typ.
16.0 24.0
Item
Symbol
Test Conditions
Unit
Drain Current
Transconductance
Output Power at 1dB G.C.P
.
Gain Flatness
I
DSS
g
m
V
p
P
1dB
G
A
mS
V
dB
dBm
Min
.
-
Max.
Drain Current
I
dsr
V
A
-
8000 -
-1.0 -2.0 -3.5
-5.0 -
-
45.0 45.5 -
8.0 9.0 -
-
8.5 9.5
V
DS
=10V
f=5.3 - 5.9 GHz
I
DS
=0.5Idss (Typ.)
Zs=Z
L
=50
Power-Added Efficiency
η
add
%
dB
-
35 -
-
-
1.2
V
DS
=5V, V
GS
=0V
V
DS
=5V, I
DS
=8.0A
Pinch-off Voltage
V
DS
=5V, I
DS
=960mA
I
GS
=-960
μ
A
Gate-Source Breakdown Voltage
V
GSO
G
1dB
Thermal Resistance
R
th
T
ch
Channel to Case
-
1.1 1.3
o
C/W
Channel Temperature Rise
10V X Idsr X Rth
-
-
100
o
C
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