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參數(shù)資料
| 型號(hào)： | FLM6472-4F |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | C-Band Internally Matched FET |
| 中文描述： | C波段內(nèi)部匹配場(chǎng)效應(yīng)管 |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大小： | 254K |
| 代理商： | FLM6472-4F |
FEATURES
High Output Power: P1dB= 36.5dBm (Typ.)
High Gain: G1dB= 9.5dB (Typ.)
High PAE:
η
add= 36% (Typ.)
Low IM3= -46dBc@Po = 25.5dBm
Broad Band: 6.4 ~ 7.2GHz
Impedance Matched Zin/Zout = 50
Hermetically Sealed Package
DESCRIPTION
The FLM6472-4F is a power GaAs FET that is internally matched for
standard communication bands to provide optimum power and gain in a
50 ohm system.
Eudyna
’
s stringent Quality Assurance Program assures the highest
reliability and consistent performance.
1
Edition 1.3
August 2004
FLM6472-4F
C-Band Internally Matched FET
Item
Drain-Source Voltage
Gate-Source Voltage
Total Power Dissipation
Storage Temperature
Channel Temperature
Symbol
VDS
VGS
15
-5
25
-65 to +175
175
Tc = 25
°
C
V
V
W
°
C
°
C
PT
Tstg
Tch
Condition
Unit
Rating
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25
°
C)
Fujitsu recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDS) should not exceed 10 volts.
2. The forward and reverse gate currents should not exceed 16.0 and -2.2 mA respectively with
gate resistance of 100
.
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25
°
C)
Item
Saturated Drain Current
Transconductance
Pinch-off Voltage
Gate Source Breakdown Voltage
Power-added Efficiency
3rd Order Intermodulation
Distortion
Output Power at 1dB G.C.P.
Power Gain at 1dB G.C.P.
Symbol
IDSS
gm
-
1700
2600
-
1700
-
-0.5
-1.5
-3.0
-5.0
-
-
8.5
9.5
-
-
36
-
35.5
36.5
-
VDS = 5V, IDS = 85mA
IGS = -85
μ
A
VDS = 5V, IDS =1100mA
VDS = 5V, VGS = 0V
VDS =10V,
IDS
=
0.65 IDSS (Typ.),
f = 6.4 ~ 7.2 GHz,
ZS=ZL= 50 ohm
f = 7.2 GHz,
f = 10 MHz
2-Tone Test
Pout = 25.5dBm S.C.L.
Channel to Case
mA
mS
V
dB
%
-44
-46
-
dBc
dBm
V
Vp
VGSO
P1dB
G1dB
Idsr
η
add
Drain Current
-
1100
1300
mA
IM3
Gain Flatness
-
-
±
0.6
dB
G
Test Conditions
Unit
Limit
Typ.
Max.
Min.
Thermal Resistance
-
5.0
6.0
°
C/W
Rth
G.C.P.: Gain Compression Point, S.C.L.: Single Carrier Level
CASE STYLE:
IB
10V x Idsr x Rth
Channel Temperature Rise
-
-
80
°
C
Tch
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| FLM6472-6F | 制造商:SUMITOMO ELECTRIC Device Innovations Inc 功能描述:High Power GaAs FETs, C-Band, 9.5dB, 6.4 7.2GHz, 1625mA, Bulk |
| FLM6472-8F | 制造商:SUMITOMO ELECTRIC Device Innovations Inc 功能描述:High Power GaAs FETs, C-Band, 9.5dB, 6.4 7.2GHz, 2200mA, Bulk |
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| FLM7179-12F | 制造商:EUDYNA 制造商全稱:Eudyna Devices Inc 功能描述:C-Band Internally Matched FET |
| FLM7179-18F | 制造商:SUMITOMO ELECTRIC Device Innovations Inc 功能描述:High Power GaAs FETs, C-Band, 8dB, 7.1 7.9GHz, 4875mA, Bulk |
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