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參數(shù)資料
| 型號： | FLU17ZM |
| 廠商： | FUJITSU LTD |
| 元件分類： | 功率晶體管 |
| 英文描述： | L-Band Medium & High Power GaAs FET |
| 中文描述： | L BAND, GaAs, N-CHANNEL, RF POWER, JFET |
| 封裝： | PLASTIC, SMT, 4 PIN |
| 文件頁數(shù)： | 1/8頁 |
| 文件大小： | 236K |
| 代理商： | FLU17ZM |
L-Band Medium & High Power GaAs FET
FEATURES
High Output Power: P1dB=32.5dBm(typ.)
High Gain: G1dB=12.5dB(typ.)
Low Cost Plastic(SMT) Package
Tape and Reel Available
DESCRIPTION
The FLU17ZM is a GaAs FET designed for base station and CPE
applications. This is a new product series using a plastic surface mount
package that has been optimized for high volume cost driven applications.
Fujitsu’s stringent Quality Assurance Program assures the highest
reliability and consistent performance.
ABSOLUTE MAXIMUM RATINGS (Case Temperature Tc=25
℃
)
ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25
℃
)
CASE STYLE: ZM
Note 1: Product supplied to this specification are 100% DC performance tested.
Note 2: The RF parameters are measured on a lot basis by sample testing 10 pcs/lot.
Acceptance Criteria:(accept/reject)=(0/1). Any lot failure shall be 100% retested.
Edition 1.1
May 2003
1
Recommended Operating Condition (Case Temperature Tc=25
℃
)
FLU17ZM
ESD
Class
Ⅱ
500
～
1999 V
Note : Based on EIAJ ED-4701 C-111A (C=100pF,R=1.5k
Ω
)
Transconductance
Limit
Typ.
600 900
Item
Symbol
Test Conditions
Unit
Drain Current
Pinch-off Voltage
Gate-Source Breakdown
Voltage
I
DSS
gm
V
p
V
GSO
mA
mS
V
dBm
Min.
-
Max.
Output Power at 1dB G.C.P.
Power Gain at 1dB G.C.P.
P
1dB
G
1dB
V
dB
-
300 -
-1.0 -2.0 -3.5
-5 -
-
31.5 32.5 -
11.5 12.5 -
V
DS
=10V,
f=2.0GHz,
I
DS
=0.6I
DSS
(Typ.)
V
DS
=5V, V
GS
=0V
Thermal Resistance
R
th
℃
/W
-
12 15
G.C.P.:Gain Compression Point
Channel to Case
V
DS
=5V, I
DS
=400mA
V
DS
=5V, I
DS
=30mA
I
GS
=-30uA
Item
Symbol
V
DS
Rating
15
Unit
V
Drain-Source Voltage
Gate-Soutce Voltage
Total Power Dissipation
Storage Temperature
V
GS
P
T
T
stg
-5
8.3
-55 to +150
V
W
℃
Channel Temperature
T
ch
150
℃
Item
Symbol
V
DS
Condition
≤
10
Unit
DC Input Voltage
Channel Temperature
Forward Gate Current
Reverse Gate Current
T
ch
I
gsf
I
gsr
≤
145
≤
9..6
≥
-1.0
V
℃
mA
mA
Gate Resistance
R
g
200
Ω
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