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參數資料
| 型號： | FLU17ZM |
| 廠商： | FUJITSU LTD |
| 元件分類： | 功率晶體管 |
| 英文描述： | L-Band Medium & High Power GaAs FET |
| 中文描述： | L BAND, GaAs, N-CHANNEL, RF POWER, JFET |
| 封裝： | PLASTIC, SMT, 4 PIN |
| 文件頁數： | 8/8頁 |
| 文件大小： | 236K |
| 代理商： | FLU17ZM |
FLU17ZM
8
For further information please contact :
FUJITSU COMPOUND SEMICONDUCTOR, INC.
2355 Zanker Rd.
San Jose, CA 95131-1138, U.S.A.
Phone: (408) 232-9500
FAX: (408) 428-9111
www.fcsi.fujitsu.com
FUJITSU QUANTUM DEVICES EUROPE LTD.
Network House
Norreys Drive
Maidenhead, Berkshire SL6 4FJ
Phone: +44 (0) 1628 504800
FAX: +44 (0) 1628 504888
Fujitsu Limited reserves the right to change products and specifications without notice.
The information does not convey any license under rights of Fujitsu Limited or others.
( 2003 FUJITSU COMPOUND SEMICONDUCTOR, INC.
Printed in U.S.A. FCSI0202M200
CAUTION
Fujitsu Compound Semiconductor Products contain
gallium arsenide
(GaAs)
which can be hazardous to the human body and the
environment. For safety, observe the following procedures:
Do not put these products into the mouth.
Do not alter the form of this product into a gas, powder, or liquid
through burning, crushing, or chemical processing as these by-
products are dangerous to the human body if inhaled, ingested, or
swallowed.
Observe government laws and company regulations when
discarding this product. This product must be discarded in
accordance with methods specified by applicable hazardous waste
procedures.
.
.
L-Band Medium & High Power GaAs FET
FUJITSU QUANTUM DEVICES LIMITED
Business Development Division
11th Floor, Hachioji Daiichi-Seimei Bldg.
3-20-6 Myojin-cho
Hachioji-city, Tokyo 192-0046, Japan
TEL: +81-426-43-5885
FAX: +81-426-43-5582
FUJITSU QUANTUM DEVICES
SINGAPORE PTE LTD.
Hong Kong Branch
Rm. 1101, Ocean Centre, 5 Canton Rd.
Tsim Sha Tsui, Kowloon, Hong Kong
TEL: +852-23770226
FAX: +852-23763269
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