- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄375849 > FM27C512QE120 (FAIRCHILD SEMICONDUCTOR CORP) 524,288-Bit (64K x 8) High Performance CMOS EPROM PDF資料下載
參數(shù)資料
| 型號： | FM27C512QE120 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | DRAM |
| 英文描述： | 524,288-Bit (64K x 8) High Performance CMOS EPROM |
| 中文描述： | 64K X 8 UVPROM, 120 ns, CDIP28 |
| 封裝： | WINDOWED, CERDIP-28 |
| 文件頁數(shù)： | 4/10頁 |
| 文件大小： | 100K |
| 代理商： | FM27C512QE120 |
4
www.fairchildsemi.com
F
FM27C512
Capacitance
T
A
= +25
°
C, f = 1 MHz (Note 2)
Symbol
Parameter
Conditions
Typ
Max
Units
C
IN1
Input Capacitance
except OE/V
PP
V
IN
= 0V
6
12
pF
C
OUT
Output Capacitance
V
OUT
= 0V
9
12
pF
C
IN2
OE/V
PP
Input
Capacitance
V
IN
= 0V
20
25
pF
AC Test Conditions
Output Load
1 TTL Gate and C
L
= 100 pF (Note 8)
Input Rise and Fall Times
≤
5 ns
Input Pulse Levels
0.45V to 2.4V
Timing Measurement Reference Level (Note 9)
Inputs
Outputs
0.8V and 2V
0.8V and 2V
AC Waveforms
(Notes 6, 7)
Note 1:
Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of
the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions
for extended periods may affect device reliability.
Note 2:
This parameter is only sampled and is not 100% tested.
Note 3:
OE may be delayed up to t
ACC
–
t
OE
after the falling edge of CE without impacting t
ACC
.
Note 4:
The t
and t
compare level is determined as follows:
High to TRI-STATE, the measured V
OH1
(DC) - 0.10V;
Low to TRI-STATE, the measured V
OL1
(DC) + 0.10V.
Note 5:
TRI-STATE may be attained using OE or CE .
Note 6:
The power switching characteristics of EPROMs require careful device decoupling. It is recommended that at least a 0.1
μ
F ceramic capacitor be used on every device
between V
CC
and GND.
Note 7:
The outputs must be restricted to V
CC
+ 1.0V to avoid latch-up and device damage.
Note 8:
1 TTL Gate: I
OL
= 1.6 mA, I
OH
= -400
μ
A. C
L
: 100 pF includes fixture capacitance.
Note 9:
Inputs and outputs can undershoot to -2.0V for 20 ns Max.
Address Valid
Valid Output
Hi-Z
2V
0.8V
2V
0.8V
2V
0.8V
ADDRESS
OUTPUT
CE
OE
t
CE
2V
0.8V
(Note 3)
(Note 3)
t
DF
(Note 4, 5)
(Note 4, 5)
t
OH
Hi-Z
t
OE
ACC
t
CF
t
DS800035-4
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| FM27C512QE150 | 524,288-Bit (64K x 8) High Performance CMOS EPROM |
| FM27C512VE150 | 524,288-Bit (64K x 8) High Performance CMOS EPROM |
| FM2G150US60 | Molding Type Module |
| FM2G200US60 | B&K 4012A REFURBISHED BY NEWARK SERVICES |
| FM2G300US60 | Sweep Function Generator; Bandwidth Max:12MHz; Frequency Max:12MHz; Frequency Min:0.1Hz; Waveforms:Sine, Square, Triangle, Ramp, Pulse RoHS Compliant: NA |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FM27C512QE-120 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:524288-Bit (64Kx 8) High Performance CMOS EPROM(95.70 k) |
| FM27C512QE150 | 功能描述:可擦除可編程ROM DIP-28 RoHS:否 制造商:Maxim Integrated 類型: 存儲容量:1024 bit 組織:1 K x 1 接口類型: 工作電流:5 uA 編程電壓: 工作電源電壓:2.8 V to 6 V 最大工作溫度:+ 85 C 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-92 |
| FM27C512QE90 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:524,288-Bit (64K x 8) High Performance CMOS EPROM |
| FM27C512T45 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 EPROM |
| FM27C512T55 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 EPROM |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。