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參數資料
| 型號： | FM2G200US60 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | B&K 4012A REFURBISHED BY NEWARK SERVICES |
| 中文描述： | 200 A, 600 V, N-CHANNEL IGBT |
| 封裝： | PLASTIC, 7PM-BB, 7 PIN |
| 文件頁數： | 5/9頁 |
| 文件大小： | 701K |
| 代理商： | FM2G200US60 |
2002 Fairchild Semiconductor Corporation
FM2G200US60 Rev. A1
F
1
10
50
1000
10000
100000
Eoff
Eon
Common Emitter
V
CC
= 300V, V
GE
=
±
15V
I
C
= 200A
T
C
= 25
℃
T
C
= 125
℃
S
Gate Resistance, R
G
[
]
1
10
50
50
100
1000
3000
Tf
Tf
Toff
Common Emitter
V
CC
= 300V, V
GE
=
±
15V
I
C
= 200A
T
C
= 25
℃
T
C
= 125
℃
S
Gate Resistance, R
G
[
]
30 40
60
80
100
120
140
160
180
200
50
100
1000
Toff
Tf
Common Emitter
V
CC
= 300V, V
GE
=
±
15V
R
G
= 1.8
T
C
= 25
℃
T
C
= 125
℃
S
Collector Current, I
C
[A]
30 40
60
80
100
120
140
160
180
200
10
100
1000
Ton
Tr
Common Emitter
V
CC
= 300V, V
GE
=
±
15V
R
G
= 1.8
T
C
= 25
℃
T
C
= 125
℃
S
Collector Current, I
C
[A]
1
10
50
50
100
1000
Common Emitter
V
CC
= 300V, V
GE
=
±
15V
I
C
= 200A
T
C
= 25
℃
T
C
= 125
℃
Ton
Tr
S
Gate Resistance, R
G
[
]
0.5
1
10
30
0
5000
10000
15000
20000
25000
30000
35000
40000
Cres
Coes
Cies
Common Emitter
V
GE
= 0V, f = 1MHz
T
C
= 25
℃
C
Collector - Emitter Voltage, V
CE
[V]
Fig 7. Capacitance Characteristics
Fig 8. Turn-On Characteristics vs.
Gate Resistance
Fig 9. Turn-Off Characteristics vs.
Gate Resistance
Fig 10. Switching Loss vs. Gate Resistance
Fig 11. Turn-On Characteristics vs.
Collector Current
Fig 12. Turn-Off Characteristics vs.
Collector Current
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相關代理商/技術參數 |
參數描述 |
|---|---|
| FM2G300US60 | 功能描述:IGBT 模塊 RoHS:否 制造商:Infineon Technologies 產品:IGBT Silicon Modules 配置:Dual 集電極—發射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝: |
| FM2G400US60 | 功能描述:IGBT 模塊 RoHS:否 制造商:Infineon Technologies 產品:IGBT Silicon Modules 配置:Dual 集電極—發射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝: |
| FM2G50US60 | 功能描述:IGBT 模塊 RoHS:否 制造商:Infineon Technologies 產品:IGBT Silicon Modules 配置:Dual 集電極—發射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝: |
| FM2G75US60 | 功能描述:IGBT 模塊 RoHS:否 制造商:Infineon Technologies 產品:IGBT Silicon Modules 配置:Dual 集電極—發射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝: |
| FM2-LAIRD | 制造商:Laird Technologies Inc 功能描述:ANTENNA HARDWARE/ACCESSORY |
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