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參數(shù)資料
| 型號(hào)： | FMBS5551 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | NPN General Purpose Amplifier |
| 中文描述： | 600 mA, 160 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | SUPERSOT-6, 6 PIN |
| 文件頁(yè)數(shù)： | 3/6頁(yè) |
| 文件大小： | 90K |
| 代理商： | FMBS5551 |
2004 Fairchild Semiconductor Corporation
Rev. A1, November 2004
F
Typical Characteristics
Figure 1. Typical Pulsed Current Gain
vs Collector Current
Figure 2. Collector-Emitter Saturation Voltage
vs Collector Current
Figure 3. Base-Emitter Saturation Voltage
vs Collector Current
Figure 4. Base-Emitter On Voltage
vs Collector Current
Figure 5. Collector Cutoff Current
vs Ambient Temperature
Figure 6. Collector-Emitter Breakdown Voltage
with Resistance Between Emitter-Base
vs Collector Current
0.1
0.2
0.5
1
2
5
10
20
50
100
0
50
100
150
200
250
I - COLLECTOR CURRENT (mA)
h
F
125 °C
25 °C
- 40 °C
V = 5V
β
Voltage vs Collector Current
Voltage vs Collector Current
1
10
100
200
0
0.1
0.2
0.3
0.4
0.5
I - COLLECTOR CURRENT (mA)
V
C
25
°
C
- 40
°
C
125
°
C
β
= 10
β
1
10
100
200
0
0.2
0.4
0.6
0.8
1
I - COLLECTOR CURRENT (mA)
V
B
β
= 10
25
°
C
- 40
°
C
125
°
C
β
Collector Current
0.1
1
10
100 200
0
0.2
0.4
0.6
0.8
1
I - COLLECTOR CURRENT (mA)
V
B
V = 5V
25
°
C
- 40
°
C
125
°
C
25
50
75
100
125
1
10
50
T - AMBIENT TEMPERATURE ( C)
I
C
V = 100V
Between Emitter-Base
0.1
1
10
100
1000
160
180
200
220
240
260
RESISTANCE (k )
B
C
I = 1.0 mA
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