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參數資料
| 型號： | FMC7G30US60 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | Arbitrary/Function Generator; Bandwidth Max:20MHz; Amplitude Accuracy :0.01dB; Frequency Max:20MHz; Frequency Min:0.1Hz; Waveforms:27 Built-in RoHS Compliant: NA |
| 中文描述： | 30 A, 600 V, N-CHANNEL IGBT |
| 封裝： | 21PM-BA, 21 PIN |
| 文件頁數： | 5/9頁 |
| 文件大小： | 662K |
| 代理商： | FMC7G30US60 |
2001 Fairchild Semiconductor Corporation
FMC7G30US60 Rev. A3
F
Fig 7. Capacitance Characteristics
Fig 8. Turn-On Characteristics vs.
Gate Resistance
Fig 9. Turn-Off Characteristics vs.
Gate Resistance
Fig 10. Switching Loss vs. Gate Resistance
Fig 11. Turn-On Characteristics vs.
Collector Current
Fig 12. Turn-Off Characteristics vs.
Collector Current
15
30
45
60
100
1000
Tf
Toff
Toff
Tf
Common Emitter
V
GE
=
±
15V, R
G
= 7
T
C
= 25
℃
━━
T
C
= 125
℃
------
S
Collector Current, I
C
[A]
1
10
0
500
1000
1500
2000
2500
3000
3500
Cres
Coes
Cies
Common Emitter
V
GE
= 0V, f = 1MHz
T
C
= 25
℃
C
Collector - Emitter Voltage, V
CE
[V]
1
10
100
10
100
1000
Common Emitter
V
CC
= 300V, V
GE
=
±
15V
I
C
= 30A
T
C
= 25
℃
━━
T
C
= 125
℃
------
Ton
Tr
S
Gate Resistance, R
G
[
]
1
10
100
100
1000
Toff
Tf
Toff
Tf
Common Emitter
V
= 300V, V
GE
=
±
15V
I
C
= 30A
T
C
= 25
℃
━━
T
C
= 125
℃
------
S
Gate Resistance, R
G
[
]
1
10
100
100
1000
10000
Eoff
Eon
Eoff
Common Emitter
V
= 300V, V
GE
=
±
15V
I
C
= 30A
T
C
= 25
℃
━━
T
C
= 125
℃
------
S
Gate Resistance, R
G
[
]
15
30
45
60
10
100
1000
Ton
Tr
Common Emitter
V
GE
=
±
15V, R
G
= 7
T
C
= 25
℃
━━
T
C
= 125
℃
------
S
Collector Current, I
C
[A]
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