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參數(shù)資料
| 型號(hào)： | FMC7G30US60 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | Arbitrary/Function Generator; Bandwidth Max:20MHz; Amplitude Accuracy :0.01dB; Frequency Max:20MHz; Frequency Min:0.1Hz; Waveforms:27 Built-in RoHS Compliant: NA |
| 中文描述： | 30 A, 600 V, N-CHANNEL IGBT |
| 封裝： | 21PM-BA, 21 PIN |
| 文件頁數(shù)： | 6/9頁 |
| 文件大小： | 662K |
| 代理商： | FMC7G30US60 |
2001 Fairchild Semiconductor Corporation
FMC7G30US60 Rev. A3
F
Fig 14. Gate Charge Characteristics
Fig 13. Switching Loss vs. Collector Current
Fig 15. SOA Characteristics
Fig 16. Turn-Off SOA Characteristics
Fig 17. RBSOA Characteristics
Fig 18. Transient Thermal Impedance
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
0.005
0.01
0.1
1
5
IGBT :
DIODE :
T
℃
/
Rectangular Pulse Duration [sec]
0
100
200
300
400
500
600
700
0.1
1
10
100
Single Nonrepetitive
Pulse T
J
≤
125
℃
V
GE
= 15V
R
G
= 7
C
Collector-Emitter Voltage, V
CE
[V]
15
30
45
60
100
1000
10000
Eoff
Eon
Eoff
Common Emitter
V
GE
=
±
15V, R
G
= 7
T
C
= 25
℃
━━
T
C
= 125
℃
------
S
Collector Current, I
C
[A]
0
20
40
60
80
100
0
3
6
9
12
15
200 V
300 V
V
CC
= 100 V
Common Emitter
R
L
= 10
T
C
= 25
℃
G
G
Gate Charge, Q
g
[ nC ]
0.3
1
10
100
1000
0.1
1
10
100
200
Single Nonrepetitive
Pulse T
C
= 25
℃
Curves must be derated
linearly with increase
in temperature
50us
100us
1
DC Operation
I
C
MAX. (Continuous)
I
C
MAX. (Pulsed)
C
C
Collector-Emitter Voltage, V
CE
[V]
1
10
100
1000
1
10
100
Safe Operating Area
V
GE
= 20V, T
C
= 100
℃
C
C
Collector-Emitter Voltage, V
CE
[V]
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