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參數(shù)資料
| 型號(hào)： | FMD40-06KC |
| 廠商： | IXYS CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | HiPerFET Power MOSFETs -Boost Chopper Topology in ISOPLUS i4-PAC |
| 中文描述： | 38 A, 600 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ISOPLUS, I4PAC-5 |
| 文件頁(yè)數(shù)： | 1/2頁(yè) |
| 文件大小： | 50K |
| 代理商： | FMD40-06KC |
2004 IXYS All rights reserved
1 - 2
4
IXYS reserves the right to change limits, test conditions and dimensions.
Advanced Technical Information
FMD 40-06KC
1
5
I
D25
V
DSS
= 600 V
R
DSon
= 60 m
= 38 A
HiPerFET
TM
Power MOSFETs
-Boost Chopper Topology-
in ISOPLUS i4-PAC
TM
Features
fast CoolMOS power MOSFET - 3rd
generation
- high blocking voltage
- low on resistance
- low thermals resistance due to reduced
chip thickness
HiPerDyn
TM
FRED
- consisting of series connected diodes
- enhanced dynamic behaviour for
high frequency operation
ISOPLUS i4-PAC
TM
package
- isolated back surface
- low coupling capacity between pins
and heatsink
- enlarged creepage towards heatsink
- application friendly pinout
- low inductive current path
- high reliability
- industry standard outline
- UL registered, E 72873
Applications
chopper for power factor correction
supply of high frequency transformer
- switched mode power supplies
- welding converters
3
4
1
2
MOSFET
Symbol
Conditions
Maximum Ratings
V
DSS
T
VJ
= 25°C to 150°C
600
V
V
GS
±20
V
I
D25
I
D90
T
C
= 25°C
T
C
= 90°C
38
25
A
A
Symbol
Conditions
Characteristic Values
(T
VJ
= 25
°
C, unless otherwise specified)
min.
typ.
max.
R
DSon
V
GS
= 10 V;
I
D
= 20 A
60
70 m
V
GSth
V
DS
= 20 V;
I
D
= 2.7 mA
2.1
3.9
V
I
DSS
V
DS
= V
DSS
;
V
GS
= 0 V; T
VJ
= 25°C
T
VJ
= 125°C
25
μA
μA
250
I
GSS
V
GS
= ±20 V; V
DS
= 0 V
200
nA
Q
g
Q
gs
Q
gd
250
25
120
nC
nC
nC
t
d(on)
t
r
t
d(off)
t
f
20
30
110
10
ns
ns
ns
ns
V
F
(reverse conduction) I
F
= 20 A;
V
GS
= 0 V
0.9
V
R
thJC
R
thJS
0.45 K/W
tbd
K/W
V
GS
= 10 V; V
DS
= 350 V; I
D
= 47 A
V
= 10 V; V
= 380 V;
I
D
= 47 A; R
G
= 1.8
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