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參數資料
| 型號： | FMG1G50US60 |
| 廠商： | Fairchild Semiconductor Corporation |
| 英文描述： | Molding Type Module |
| 中文描述： | 成型型模塊 |
| 文件頁數： | 1/9頁 |
| 文件大小： | 627K |
| 代理商： | FMG1G50US60 |
FMG1G50US60H Rev. A
IGBT
F
2002 Fairchild Semiconductor Corporation
Absolute Maximum Ratings
T
C
= 25
°
C unless otherwise noted
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Symbol
V
CES
V
GES
I
C
I
CM (1)
I
F
I
FM
T
SC
P
D
T
J
T
stg
V
iso
Mounting
Torque
Description
FMG1G50US60H
600
±
20
50
100
50
100
10
250
-40 to +150
-40 to +125
2500
2.0
2.0
Units
V
V
A
A
A
A
us
W
°
C
°
C
V
N.m
N.m
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Pulsed Collector Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Short Circuit Withstand Time
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Isolation Voltage
Power Terminals Screw : M5
Mounting Screw : M5
@ T
C
= 25
°
C
@ T
C
= 100
°
C
@ T
C
= 100
°
C
@ T
C
= 25
°
C
@ AC 1minute
FMG1G50US60H
Molding Type Module
General Description
Fairchild’s Insulated Gate Bipolar Transistor (IGBT) power
modules provide low conduction and switching losses as
well as short circuit ruggedness. They are designed for
applications such as motor control, uninterrupted power
supplies (UPS) and general inverters where short circuit
ruggedness is a required feature.
Features
UL Certified No. E209204
Short Circuit rated 10us @ T
C
= 100
°
C, V
GE
= 15V
High Speed Switching
Low Saturation Voltage : V
CE(sat)
= 2.2 V @ I
C
= 50A
High Input Impedance
Fast & Soft Anti-Parallel FWD
Application
AC & DC Motor Controls
General Purpose Inverters
Robotics
Servo Controls
UPS
Internal Circuit Diagram
C1
E2
E1/C2
G1
E1
Package Code : 7PM-GA
相關PDF資料 |
PDF描述 |
|---|---|
| FMG1G50US60H | Molding Type Module |
| FMG1G50US60L | Molding Type Module |
| FMG1G75US60H | Molding Type Module |
| FMG1G75US60L | Molding Type Module |
| FMG2G100US60 | Molding Type Module |
相關代理商/技術參數 |
參數描述 |
|---|---|
| FMG1G50US60H | 功能描述:IGBT 晶體管 600V/50A/Module RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| FMG1G50US60L | 功能描述:IGBT 晶體管 600V/50A/Module RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| FMG1G75US60H | 功能描述:IGBT 晶體管 600V/75A/Module RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| FMG1G75US60L | 功能描述:IGBT 晶體管 600V/75A/Module RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| FMG-2 | 制造商:ESSENTRA COMPONENTS 功能描述:FAN MNT GASKET COMBO BLACK 80MM |
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