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參數資料
| 型號： | FMMT458 |
| 廠商： | ZETEX PLC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR |
| 中文描述： | 225 mA, 400 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 文件頁數： | 1/2頁 |
| 文件大小： | 130K |
| 代理商： | FMMT458 |
SOT23 NPN SILICON PLANAR
HIGH VOLTAGE TRANSISTOR
ISSUE 3 OCTOBER 1995
FEATURES
*
400 Volt V
CEO
COMPLEMENTARY TYPE
FMMT558
PARTMARKING DETAIL
458
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
400
V
Collector-Emitter Voltage
V
CEO
400
V
Emitter-Base Voltage
V
EBO
5
V
Continuous Collector Current
I
C
225
mA
Peak Pulse Current
I
CM
1
A
Base Current
I
B
200
mA
Power Dissipation at T
amb
=25°C
P
tot
500
mW
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C).
PARAMETER
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector Cut-Off Current
Collector Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Base-Emitter
Turn On Voltage
Static Forward
Current Transfer Ratio
SYMBOL
V
(BR)CBO
MIN.
400
MAX.
UNIT
V
CONDITIONS.
I
C
=100
μ
A
V
CEO(sus)
400
V
I
C
=10mA*
V
(BR)EBO
5
V
I
E
=100
μ
A
I
CBO
I
CES
I
EBO
V
CE(sat)
100
100
100
0.2
0.5
0.9
nA
nA
nA
V
V
V
V
CB
=320V
V
CE
=320V
V
EB
=4V
I
C
=20mA, I
B
=2mA*
I
C
=50mA, I
B
=6mA*
I
C
=50mA, I
B
=5mA*
V
BE(sat)
V
BE(on)
0.9
V
I
C
=50mA, V
CE
=10V*
h
FE
100
100
15
50
300
I
C
=1mA, V
CE
=10V
I
C
=50mA, V
CE
=10V*
I
C
=100mA, V
CE
=10V*
I
=10mA, V
CE
=20V
f=20MHz
V
CB
=20V, f=1MHz
Transition Frequency
f
T
MHz
Collector-Base
Breakdown Voltage
Switching times
C
obo
5
pF
t
on
t
off
135 Typical
2260 Typical
ns
ns
I
C
=50mA, V
CC
=100V
I
B1
=5mA, I
B2
=-10mA
*Measured under pulsed conditions. Pulse width=300
μ
s. Duty cycle
≤
2%
Spice parameter data is available upon request for this device
FMMT458
C
B
E
SOT23
3 - 112
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