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參數(shù)資料
| 型號(hào)： | FMMT495 |
| 廠商： | ZETEX PLC |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | NPN SILICON PLANAR MEDIUM POWER HIGH PERFORMANCE TRANSISTOR |
| 中文描述： | 1000 mA, 150 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 文件頁(yè)數(shù)： | 1/2頁(yè) |
| 文件大小： | 135K |
| 代理商： | FMMT495 |
SOT23 NPN SILICON PLANAR MEDIUM
POWER HIGH PERFORMANCE TRANSISTOR
%
ISSUE 3 - NOVEMBER 1995
PARTMARKING DETAIL
495
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
170
V
Collector-Emitter Voltage
V
CEO
150
V
Emitter-Base Voltage
V
EBO
5
V
Continuous Collector Current
I
C
1
A
Peak Pulse Current
I
CM
2
A
Base Current
I
B
200
mA
Power Dissipation at T
amb
=25°C
P
tot
500
mW
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C).
PARAMETER
SYMBOL
MIN.
MAX.
UNIT
CONDITIONS.
Breakdown Voltages
V
(BR)CBO
170
V
I
C
=100
μ
A
V
CEO(sus)
150
V
I
C
=10mA*
I
E
=100
μ
A
V
(BR)EBO
5
V
Collector Cut-Off Currents
I
CBO
100
nA
V
CB
=150V
I
CES
100
nA
V
CE
=150V
Emitter Cut-Off Current
I
EBO
100
nA
V
EB
=4V
Collector-Emitter
Saturation Voltage
V
CE(sat)
0.2
0.3
V
V
I
C
=250mA, I
B
=25mA*
I
C
=500mA, I
B
=50mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
1.0
V
I
C
=500mA, I
B
=50mA*
Base-Emitter
Turn On Voltage
V
BE(on)
1.0
V
I
C
=500mA, V
CE
=10V*
Static Forward Current
Transfer Ratio
h
FE
100
100
50
10
300
I
C
=1mA, V
=10V
I
C
=250mA, V
CE
=10V*
I
C
=500mA, V
=10V*
I
C
=1A, V
CE
=10V*
Transition Frequency
f
T
100
MHz
I
=50mA, V
CE
=10V
f=100MHz
Collector-Base
Breakdown Voltage
*Measured under pulsed conditions. Pulse width=300
μ
s. Duty cycle
≤
2%
C
obo
10
pF
V
CB
=10V, f=1MHz
FMMT495
C
B
E
3 - 123
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FMMT495 | 制造商:Diodes Incorporated 功能描述:TRANSISTOR NPN SOT-23 |
| FMMT495_12 | 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:150V NPN SILICON PLANAR MEDIUM POWER TRANSISTOR IN SOT23 |
| FMMT495QTA | 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:150V NPN SILICON PLANAR MEDIUM POWER TRANSISTOR IN SOT23 |
| FMMT495TA | 功能描述:兩極晶體管 - BJT NPN High Voltage RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| FMMT495TA-CUT TAPE | 制造商:DIODES 功能描述:FMMT495 Series NPN 1 A 150 V SMT Silicon Medium Power Transistor - SOT-23 |
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