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參數資料
| 型號： | FMS7G20US60 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | SWTCH PLUNGR SPDT 25A SCREW TERM |
| 中文描述： | 20 A, 600 V, N-CHANNEL IGBT |
| 封裝： | 25PM-AA, 25 PIN |
| 文件頁數： | 3/9頁 |
| 文件大?。?/td> | 902K |
| 代理商： | FMS7G20US60 |
2003 Fairchild Semiconductor Corporation
FMS7G20US60 Rev. A
F
Electrical Characteristics of DIODE
@ Inverter & Brake
T
C
= 25
°
C unless otherwise noted
Electrical Characteristics of DIODE
@ Converter
T
C
= 25
°
C unless otherwise noted
Thermal Characteristics
NTC Thermistor Characteristics
Symbol
Parameter
Test Conditions
Min.
--
--
--
--
--
--
--
--
Typ.
1.9
2.0
75
110
1.3
1.8
50
100
Max.
2.8
--
150
--
2.6
--
195
--
Units
V
FM
Diode Forward Voltage
I
F
= 20A
T
C
= 25
°
C
T
C
= 100
°
C
T
C
= 25
°
C
T
C
= 100
°
C
T
C
= 25
°
C
T
C
= 100
°
C
T
C
= 25
°
C
T
C
= 100
°
C
V
t
rr
Diode Reverse Recovery Time
I
F
= 20A
di / dt = 40 A/us
ns
I
rr
Diode Peak Reverse Recovery
Current
A
Q
rr
Diode Reverse Recovery Charge
nC
Symbol
Parameter
Test Conditions
Min.
--
--
--
--
Typ.
1.1
1.0
--
5
Max.
1.5
--
8
--
Units
V
FM
Diode Forward Voltage
I
F
= 20A
T
C
= 25
°
C
T
C
= 100
°
C
T
C
= 25
°
C
T
C
= 100
°
C
V
I
RRM
Repetitive Reverse Current
V
R
= V
RRM
mA
Symbol
R
θ
JC
R
θ
JC
R
θ
JC
R
θ
JC
R
θ
JC
Parameter
Typ.
--
--
--
--
--
60
Max.
1.4
2.3
1.4
2.3
1.5
--
Units
°
C
/
W
°
C
/
W
°
C
/
W
°
C
/
W
°
C
/
W
g
Inverter
Junction-to-Case (IGBT Part, per 1/6 Module)
Junction-to-Case (DIODE Part, per 1/6 Module)
Junction-to-Case (IGBT Part)
Junction-to-Case (DIODE Part)
Junction-to-Case (DIODE Part, per 1/6 Module)
Weight of Module
Brake
Converter
Weight
Symbol
R
25
R
100
B
(25/100)
Parameter
Tol.
+/- 5 %
+/- 5 %
+/- 3 %
Typ.
4.7
0.39
3688
Units
K
K
Thermistor
Rated Resistance @ Tc = 25
°
C
Rated Resistance @ Tc = 100
°
C
B - Value
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