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參數資料
| 型號： | FMS7G20US60 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | SWTCH PLUNGR SPDT 25A SCREW TERM |
| 中文描述： | 20 A, 600 V, N-CHANNEL IGBT |
| 封裝： | 25PM-AA, 25 PIN |
| 文件頁數： | 6/9頁 |
| 文件大小： | 902K |
| 代理商： | FMS7G20US60 |
2003 Fairchild Semiconductor Corporation
FMS7G20US60 Rev. A
F
0
10
20
30
40
50
60
0
3
6
9
12
15
300 V
200 V
V
C
C
= 100 V
Common Emitter
R
L
= 15
T
C
= 25
o
C
G
a
i
G
E
G
ate C
harge, Q
g
[nC
]
10
15
20
25
30
35
40
100
1000
10000
Common Emitter
V
GE
=
±
15V, R
G
= 10
T
C
= 25
℃
━━
T
C
= 125
℃
------
Eoff
Eon
Eoff
S
i
C
ollector C
urrent, I
C
[A
]
0
100
200
300
400
500
600
700
0.1
1
10
80
Single Nonrepetitive
Pulse T
J
≤
125
℃
V
GE
= 15V
R
G
= 10
C
Collector-Emitter Voltage, V
CE
[V]
3
6
9
12
15
18
21
0.1
1
10
20
Common Cathode
di/dt = 40A/us
T
C
= 25
℃
T
C
= 100
℃
--------
I
rr
T
rr
P
R
Forward Current, I
F
[A]
0
1
2
3
4
0
5
10
15
20
25
30
35
40
Common Cathode
V
GE
= 0V
T
C
= 25
℃
T
C
= 125
℃
F
Forward Voltage, V
F
[V]
Fig 14. Gate Charge Characteristics
Fig 13. Switching Loss vs. Collector Current
Fig 15. SOA Characteristics
Fig 16. RBSOA Characteristics
Fig 17. Forward Characteristics
0.3
1
10
100
1000
0.01
0.1
1
10
100
Single Nonrepetitive
Pulse T
C
= 25
℃
Curves must be derated
linearly with increase
in temperature
50us
100us
1 ms
DC Operation
I
C
MAX. (Continuous)
I
C
MAX. (Pulsed)
C
C
Collector-Emitter Voltage, V
CE
[V]
Fig 18. Reverse Recovery Characteristics
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